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NVC3S5A51PLZ Datasheet(PDF) 1 Page - ON Semiconductor |
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NVC3S5A51PLZ Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page 1 Publication Order Number : NVC3S5A51PLZ/D www.onsemi.com © Semiconductor Components Industries, LLC, 2015 December 2015 - Rev. P1 VDSS RDS(on) Max ID Max 60V 250mΩ@ 10V 1.8A 330mΩ@ 4.5V 350mΩ@ 4.0V NVC3S5A51PLZ Automotive Power MOSFET designed to minimize gate charge and low on resistance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features 4V drive High ESD protection Low On-Resistance AEC-Q101 qualified and PPAP capable Pb-Free, Halogen Free and RoHS compliance Typical Applications Reverse Battery Protection High Side Load Switch Automotive Body Controllers SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25 C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS 20 V Drain Current (DC) (Note 2) ID 1.8 A Drain Current (DC) (Note 3) 1.7 A Drain Current (Pulse) PW 10s, duty cycle 1% IDP 7.2 A Power Dissipation Ta=25 C(Note 2) PD 1.2 W Power Dissipation Ta=25 C(Note 3) 0.8 W Junction Temperature and Storage Temperature Tj, Tstg 55 to +175 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit Junction to Ambient (Note 2) RJA 125 C/W (Note 3) 182 C/W Note 2 : Surface mounted on ceramic substrate(900mm2 0.8mm). Note 3 : Surface mounted on FR4 board using a 92mm2, 1 oz. Cu pad. Advance Information Power MOSFET 60V, 250mΩ, 1.8A, P-Channel ELECTRICAL CONNECTION P-Channel ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. MARKING 1 : Gate 2 : Source 3 : Drain 1 2 3 This document contains information on a new product. Specifications and information herein are subject to change without notice. CPH3 3 2 1 |
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