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Publication Order Number :

NVC3S5A51PLZ/D

www.onsemi.com

© Semiconductor Components Industries, LLC, 2015

December 2015 - Rev. P1

VDSS

RDS(on) Max

ID Max

60V

250mΩ@

10V

1.8A

330mΩ@

4.5V

350mΩ@

4.0V

NVC3S5A51PLZ

Automotive Power MOSFET designed to minimize gate charge and low on

resistance. AEC-Q101 qualified MOSFET and PPAP capable suitable for

automotive applications.

Features

 4V drive

 High ESD protection

 Low On-Resistance

 AEC-Q101 qualified and PPAP capable

 Pb-Free, Halogen Free and RoHS compliance

Typical Applications

 Reverse Battery Protection

 High Side Load Switch

 Automotive Body Controllers

SPECIFICATIONS

ABSOLUTE MAXIMUM RATING at Ta = 25

Parameter

Symbol

Value

Unit

Drain to Source Voltage

VDSS

60

V

Gate to Source Voltage

VGSS

20

V

Drain Current (DC) (Note 2)

ID

1.8

A

Drain Current (DC) (Note 3)

1.7

A

Drain Current (Pulse)

PW

 10s, duty cycle  1%

IDP

7.2

A

Power Dissipation

Ta=25

C(Note 2)

PD

1.2

W

Power Dissipation

Ta=25

C(Note 3)

0.8

W

Junction Temperature and

Storage Temperature

Tj, Tstg

55 to +175

C

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Value

Unit

Junction to Ambient

(Note 2)

RJA

125

C/W

(Note 3)

182

C/W

 0.8mm).

Advance Information

Power MOSFET

60V, 250mΩ, 1.8A, P-Channel

ELECTRICAL CONNECTION

P-Channel

ORDERING INFORMATION

See detailed ordering and shipping

information on page 6 of this data sheet.

MARKING

1 : Gate

2 : Source

3 : Drain

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2

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This document contains information on a new product. Specifications and information

herein are subject to change without notice.

CPH3

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