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PCP1402 Datasheet(PDF) 1 Page - ON Semiconductor |
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PCP1402 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 5 page 90914HK TC-00003146/52614TKIM No.A2303-1/5 Semiconductor Components Industries, LLC, 2014 September, 2014 http://onsemi.com PCP1402 Features On-resistance RDS(on)=1.8Ω (typ) Input Capacitance Ciss=210pF (typ) Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Value Unit Drain to Source Voltage VDSS 250 V Gate to Source Voltage VGSS 30 V Drain Current (DC) ID 1.2 A Drain Current (Pulse) IDP PW 10s, duty cycle1% 4.8 A Power Dissipation PD Tc=25 C 3.5 W When mounted on ceramic substrate (600mm 2 0.8mm) 1.5 W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Case Steady State R JC 35.7 C /W Junction to Ambient R JA 83.3 C /W When mounted on ceramic substrate (600mm 2 0.8mm) Electrical Characteristics at Ta 25C Parameter Symbol Conditions Value Unit min typ max Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 250 V Zero-Gate Voltage Drain Current IDSS VDS=250V, VGS=0V 1 A Gate to Source Leakage Current IGSS VGS=±30V, VDS=0V 10 A Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA 2.5 3.5 V Forward Transconductance gFS VDS=10V, ID=600mA 1.2 S Continued on next page. Ordering number : ENA2303A Power MOSFET 250V, 2.4Ω, 1.2A, Single N-Channel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. |
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