NTMFD4C87NT1G datasheet(7/12 Pages) ONSEMI

Part #	NTMFD4C87NT1G

Description	Dual N-Channel SO8FL

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Manufacturer	ONSEMI [ON Semiconductor]

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NTMFD4C87N

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7

TYPICAL CHARACTERISTICS − Q1

QT

Figure 9. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

QG, TOTAL GATE CHARGE (nC)

11

10

8

6

5

2

1

0

2

4

6

8

10

Figure 10. Diode Forward Voltage vs. Current

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

0.9

0.8

0.7

0.6

0.5

0.1

0

2

6

8

12

14

18

20

VGS = 4.5 V

VDS = 15 V

ID = 30 A

TJ = 25°C

QGS

QGD

34

7

9

TJ = 25°C

4

10

16

0.4

0.3

0.2

11

1

3

5

7

9

Figure 11. Resistive Switching Time Variation

vs. Gate Resistance

RG, GATE RESISTANCE (W)

10

1

10

100

1000

Figure 12. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

100

VGS = 10 V

VDS = 15 V

ID = 15 A

tf

tr

td(on)

td(off)

100

10

1

0.1

1

100

1000

10

VGS ≤ 10 V

Single Pulse

TC = 25°C

10

ms

RDS(on) Limit

Thermal Limit

Package Limit

100

ms

1 ms

10 ms

dc

Figure 13. Thermal Characteristics

PULSE TIME (sec)

0.01

0.001

1

0.0001

0.1

0.00001

10

0.000001

0.001

0.1

1

10

100

1000

50% Duty Cycle

Single Pulse

20%

10%

5%

2%

1%

0.01

PCB Cu Area 650 mm2

PCB Cu thk 1 oz

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NTMFD4C87NT1G Datasheet(PDF) 7 Page - ON Semiconductor

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