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BUS50 Datasheet(PDF) 2 Page - ON Semiconductor |
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BUS50 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page BUS50 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS2 Collector–Emitter Sustaining Voltage (IC = 200 mA, IB = 0, L = 25 mH) VCEO(sus) 125 Vdc Collector Cutoff Current at Reverse Bias (VCE = 200 V, VBE = –1.5 V) (VCE = 200 V, VBE = –1.5 V, TC = 125_C) ICEX 0.2 2 mAdc Collector–Emitter Cutoff Current (VCE = 125 V) ICEO 1 mAdc Emitter Cutoff Current (VEB = 7 V) IEBO 0.2 mAdc ON CHARACTERISTICS2 DC Current Gain (IC = 5 A, VCE = 4 V) (IC = 50 A, VCE = 4 V) hFE 20 15 Collector–Emitter Saturation Voltage (IC = 35 A, IB = 2 A) (IC = 70 A, IB = 7 A) VCE(sat) 1 1.2 Vdc Base–Emitter Saturation Voltage (IC = 35 A, IB = 2 A) (IC = 70 A, IB = 7 A) VBE(sat) 1.8 2 Vdc SWITCHING CHARACTERISTICS (Resistive Load) ton and (Inductive Load) tsv, tfi Turn–On Time I 70 A I 7A V 5V ton 1.2 µs Storage Time IC = 70 A, IB1 = 7 A VBE(off) = –5 V (VCC = 125 V) tsv 1.5 Fall Time (VCC = 125 V) tfi 0.3 2 Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%. |
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