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100355 Datasheet(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # 100355
Description  Low Power Quad Multiplexer/Latch
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

100355 Datasheet(HTML) 4 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Above
which the useful life may be impaired.
Storage Temperature (T
STG)
−65˚C to +150˚C
Maximum Junction Temperature (T
J)
Ceramic
+175˚C
V
EE Pin Potential to Ground Pin
−7.0V to +0.5V
Input Voltage (DC)
V
EE to +0.5V
Output Current (DC Output HIGH)
−50 mA
ESD (Note 3)
≥2000V
Recommended Operating
Conditions
Case Temperature (T
C)
Military
−55˚C to +125˚C
Supply Voltage (V
EE)
−5.7V to −4.2V
Note 2: Absolute maximum ratings are those values beyond which the de-
vice may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 3: ESD testing conforms to MIL-STD-883, Method 3015.
Military Version
DC Electrical Characteristics
V
EE = −4.2V to −5.7V, VCC = VCCA = GND, TC = −55˚C to +125˚C
Symbol
Parameter
Min
Max
Units
T
C
Conditions
Notes
V
OH
Output HIGH Voltage
−1025
−870
mV
0˚C to +125˚C
−1085
−870
mV
−55˚C
V
IN = VIH (Max)
Loading with
(Notes 4, 5,
6)
V
OL
Output LOW Voltage
−1830
−1620
mV
0˚C to +125˚C
or V
IL (Min)
50
Ω to −2.0V
−1830
−1555
mV
−55˚C
V
OHC
Output HIGH Voltage
−1035
mV
0˚C to +125˚C
−1085
mV
−55˚C
V
IN = VIH (Min)
Loading with
(Notes 4, 5,
6)
V
OLC
Output LOW Voltage
−1610
mV
0˚C to +125˚C
or V
IL (Max)
50
Ω to −2.0V
−1555
mV
−55˚C
V
IH
Input HIGH Voltage
−1165
−870
mV
−55˚C to
Guaranteed HIGH Signal
(Notes 4, 5,
6, 7)
+125˚C
for ALL Inputs
V
IL
Input LOW Voltage
−1830
−1475
mV
−55˚C to
Guaranteed LOW Signal
(Notes 4, 5,
6, 7)
+125˚C
for ALL Inputs
I
IL
Input LOW Current
0.50
µA
−55˚C to
V
EE = −4.2V
(Notes 4, 5,
6)
+125˚C
V
IN = VIL (Min)
I
IH
Input HIGH Current
S
0,S1
220
E
1,E2
350
µA
0˚C to +125˚C
D
na–Dnd
340
V
EE = −5.7V
MR
430
V
IN = VIH (Max)
(Notes 4, 5,
6)
S
0,S1
320
E
1,E2
500
µA
−55˚C
D
na–Dnd
490
MR
630
I
EE
Power Supply Current
−95
−32
mA
−55˚C to +125˚C
Inputs Open
(Notes 4, 5,
6)
Note 4: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case
condition at cold temperatures.
Note 5: Screen tested 100% on each device at −55˚C, +25˚C, and +125˚C Temp., Subgroups 1, 2, 3, 7, and 8.
Note 6: Sample tested (Method 5005, Table 1) on each Mfg. lot at +25˚, +125˚C, and −55˚C Temp., Subgroups 1, 2, 3, 7, and 8.
Note 7: Guaranteed by applying specified input condition and testing VOH/VOL.
www.national.com
4


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