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LE25S40FD Datasheet(PDF) 11 Page - ON Semiconductor

Part # LE25S40FD
Description  Serial Flash Memory
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

LE25S40FD Datasheet(HTML) 11 Page - ON Semiconductor

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LE25S40FD
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6. Small Sector Erase
Small sector erase is an operation that sets the memory cell data in any small sector to "1". A small sector consists of
4Kbytes. "Figure 11 Small Sector Erase" shows the timing waveforms, and Figure 20 shows a small sector erase
flowchart. The small sector erase command consists of the first through fourth bus cycles, and it is initiated by
inputting the 24-bit addresses following (20h) or (D7h). Addresses A18 to A12 are valid, and Addresses A23 to A19
are "don't care". After the command has been input, the internal erase operation starts from the rising CS edge, and it
ends automatically by the control exercised by the internal timer. Erase end can also be detected using status register
RDY.
Figure 11 Small Sector Erase
7. Sector Erase
Sector erase is an operation that sets the memory cell data in any sector to "1". A sector consists of 64Kbytes.
"Figure 12 Sector Erase" shows the timing waveforms, and Figure 20 shows a sector erase flowchart. The sector
erase command consists of the first through fourth bus cycles, and it is initiated by inputting the 24-bit addresses
following (D8h). Addresses A18 to A16 are valid, and Addresses A23 to A19 are "don't care". After the command
has been input, the internal erase operation starts from the rising CS edge, and it ends automatically by the control
exercised by the internal timer. Erase end can also be detected using status register RDY.
Figure 12 Sector Erase
Self-timed
Erase Cycle
SCK
SI
High Impedance
SO
CS
tSSE
Add.
20h / D7h
Add.
Add.
15
0
1
2
3
4
5
6
7
8
23
16
24
31
Mode3
Mode0
8CLK
MSB
SCK
SI
High Impedance
SO
CS
tSE
Self-timed
Erase Cycle
Add.
D8h
Add.
Add.
15
0
1
2
3
4
5
6
7
8
23
16
24
31
Mode3
Mode0
8CLK
MSB


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