MGSF3455XT1 datasheet(1/4 Pages) ONSEMI

Part #	MGSF3455XT1

Description	Small-Signal MOSFETs Single P-Channel Field Effect Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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May, 2013 − Rev. 2

1

Publication Order Number:

MGSF3455XT1/D

MGSF3455XT1

Preliminary Information

Low RDS(on) Small-Signal

MOSFETs Single P-Channel

Field Effect Transistors

These miniature surface mount MOSFETs utilize the High

Cell Density, HDTMOS process. Low rDS(on) assures

minimal power loss and conserves energy, making this

device ideal for use in small power management circuitry.

Typical applications are dc−dc converters, power

management in portable and battery−powered products such

as computers, printers, PCMCIA cards, cellular and cordless

telephones.

• Low rDS(on) Provides Higher Efficiency and Extends Battery Life

• Miniature TSOP 6 Surface Mount Package Saves Board Space

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

30

Vdc

Gate−to−Source Voltage — Continuous

VGS

± 20

Vdc

Drain Current — Continuous @ TA = 255C

Drain Current — Pulsed Drain Current (tp 3 10 ms)

ID

IDM

1.45

10

A

Total Power Dissipation @ TA = 255C

PD

400

mW

Operating and Storage Temperature Range

TJ, Tstg

− 55 to 150

°C

Thermal Resistance — Junction−to−Ambient

RθJA

300

°C/W

Maximum Lead Temperature for Soldering Purposes, for 10 seconds

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

ORDERING INFORMATION

Device

Reel Size

Tape Width

Quantity

MGSF3455XT1

7″

8 mm embossed tape

3000

MGSF3455XT3

13″

8 mm embossed tape

10,000

http://onsemi.com

P−CHANNEL

ENHANCEMENT−MODE

MOSFET

RDS(on) = 80 mW (TYP)

CASE 318G−02, Style 1

TSOP 6 PLASTIC

D

G

D

S

DRAIN

3

GATE

SOURCE

4

6

5

2

1

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