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MGSF3455XT1 Datasheet(PDF) 1 Page - ON Semiconductor |
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MGSF3455XT1 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev. 2 1 Publication Order Number: MGSF3455XT1/D MGSF3455XT1 Preliminary Information Low RDS(on) Small-Signal MOSFETs Single P-Channel Field Effect Transistors These miniature surface mount MOSFETs utilize the High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dc−dc converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low rDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature TSOP 6 Surface Mount Package Saves Board Space MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 30 Vdc Gate−to−Source Voltage — Continuous VGS ± 20 Vdc Drain Current — Continuous @ TA = 255C Drain Current — Pulsed Drain Current (tp 3 10 ms) ID IDM 1.45 10 A Total Power Dissipation @ TA = 255C PD 400 mW Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Thermal Resistance — Junction−to−Ambient RθJA 300 °C/W Maximum Lead Temperature for Soldering Purposes, for 10 seconds TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION Device Reel Size Tape Width Quantity MGSF3455XT1 7″ 8 mm embossed tape 3000 MGSF3455XT3 13″ 8 mm embossed tape 10,000 http://onsemi.com P−CHANNEL ENHANCEMENT−MODE MOSFET RDS(on) = 80 mW (TYP) CASE 318G−02, Style 1 TSOP 6 PLASTIC D D D G D S DRAIN 3 GATE SOURCE 4 6 5 2 1 |
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