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NL17SH17 Datasheet(PDF) 3 Page - ON Semiconductor |
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NL17SH17 Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 5 page NL17SH17 http://onsemi.com 3 DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions VCC (V) TA = 255C TA v 855C *555C to 1255C Unit Min Typ Max Min Max Min Max VT+ Positive Threshold Voltage 3.0 4.5 5.5 2.0 3.0 3.6 2.2 3.15 3.85 2.2 3.15 3.85 2.2 3.15 3.85 V VT− Negative Threshold Voltage 3.0 4.5 5.5 0.9 1.35 1.65 1.5 2.3 2.9 0.9 1.35 1.65 0.9 1.35 1.65 V VH Hysteresis Voltage 3.0 4.5 5.5 0.3 0.4 0.5 0.57 0.67 0.74 1.2 1.4 1.6 0.3 0.4 0.5 1.2 1.4 1.6 0.3 0.4 0.5 1.2 1.4 1.6 V VOH High−Level Output Voltage VIN ≥ VTmin IOH = −50 mA 2.0 3.0 4.5 1.9 2.9 4.4 2.0 3.0 4.5 1.9 2.9 4.4 1.9 2.9 4.4 V VIN ≥ VTmin IOH = −4 mA IOH = −8 mA 3.0 4.5 2.58 3.94 2.48 3.80 2.34 3.66 VOL Low−Level Output Voltage VIN ≤ VTmax IOL = 50 mA 2.0 3.0 4.5 0.0 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 V VIN ≤ VTmax IOL = 4 mA IOL = 8 mA 3.0 4.5 0.36 0.36 0.44 0.44 0.52 0.52 IIN Input Leakage Current VIN = 5.5 V or GND 0 to 5.5 $0.1 $1.0 $1.0 mA ICC Quiescent Supply Current VIN = VCC or GND 5.5 1.0 20 40 mA AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Symbol Parameter VCC (V) Test Conditions TA = 255C TA v 855C *555C to 1255C Unit Min Typ Max Min Max Min Max tPLH, tPHL Propagation Delay, A to Y 3.0 to 3.6 CL = 15 pF CL = 50 pF 7.0 8.5 12.8 16.3 1.0 1.0 15.0 18.5 1.0 1.0 17.0 20.5 ns 4.5 to 5.5 CL = 15 pF CL = 50 pF 4.0 5.5 8.6 10.6 1.0 1.0 10.0 12.0 1.0 1.0 11.5 13.5 CIN Input Capacitance 5.0 10 10 10 pF CPD Power Dissipation Capacitance (Note 6) Typical @ 25°C, VCC = 5.0 V 7.0 pF 6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. |
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