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NTLUS4C16N Datasheet(PDF) 3 Page - ON Semiconductor |
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NTLUS4C16N Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 7 page NTLUS4C16N www.onsemi.com 3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Units Max Typ Min Test Condition Symbol DRAIN-SOURCE DIODE CHARACTERISTICS Reverse Recovery Time tRR VGS = 0 V, dIs/dt = 100 A/ms, IS = 2.0 A 21 ns Charge Time ta 11 Discharge Time tb 10 Reverse Recovery Charge QRR 10.5 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. DEVICE ORDERING INFORMATION Device Package Shipping† NTLUS4C16NTAG UDFN6 (Pb−Free) 3000 / Tape & Reel NTLUS4C16NTBG UDFN6 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. |
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Similar Description - NTLUS4C16N |
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