© Semiconductor Components Industries, LLC, 2015

November, 2015 − Rev. 1

1

Publication Order Number:

NTND3184NZ/D

NTND3184NZ

Small Signal MOSFET

20 V, 200 mA, Dual N−Channel,

0.65 mm x 0.90 mm x 0.4 mm XLLGA−6

Package

Features

x 0.90 mm Package

Compliant

Applications

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

20

V

Gate−to−Source Voltage

±8

V

Continuous Drain

Current (Note 1)

Steady

State

200

mA

140

t

v 5 s

220

Power Dissipation

(Note 1)

Steady

State

125

mW

t

v 5 s

166

Pulsed Drain Current

800

mA

Operating Junction and Storage Temperature

−55 to

150

°C

Source Current (Body Diode) (Note 2)

200

mA

Lead Temperature for Soldering Purposes

(1/8

″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using the minimum recommended pad size,

1 oz Cu.

2. Pulse Test: pulse width

v300 ms, duty cycle v2%

www.onsemi.com

(Bottom View)

PINOUT DIAGRAM

D1

S1

G1

N−Channel

MOSFET

See detailed ordering and shipping information on page 2 of

this data sheet.

ORDERING INFORMATION

20 V

1.5

W @ 4.5 V

2.0

W @ 2.5 V

200 mA

3.0

W @ 1.8 V

4.5

W @ 1.5 V

MARKING DIAGRAM

A

= Specific Device Code

M

= Date Code

A M

1

D2

S2

G2

D1

G2

S2

D2

G1

S1

3

2

1

6

5

4

XLLGA6

Case 713AC