NTND31225CZ datasheet(1/8 Pages) ONSEMI

Part #	NTND31225CZ

Description	Small Signal MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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November, 2015 − Rev. 0

1

Publication Order Number:

NTND31225CZ/D

NTND31225CZ

Small Signal MOSFET

20 V, Complementary 0.65 mm x 0.90 mm

x 0.4 mm XLLGA6 Package

Features

• Advanced Trench Complementary MOSFET

• Offers a Low RDS(ON) Solution in the Ultra Small

0.65 mm

× 0.90 mm Package

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• Small Signal Load Switch with Level Shift

• Analog Switch

• High Speed Interfacing

• Optimized for Power Management in Ultra Portable Products

MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-to-Source Voltage

NMOS

VDSS

20

V

PMOS

−20

Gate-to-Source Voltage

NMOS

VGSS

±8

V

PMOS

±8

N−Channel

Continuous Drain

Current (Note 1)

Steady

State

TA = 25°C

ID

220

mA

TA = 85°C

158

t

≤ 5 s

TA = 25°C

253

P−Channel

Continuous Drain

Current (Note 1)

Steady

State

TA = 25°C

ID

−127

mA

TA = 85°C

−91

t

≤ 5 s

TA = 25°C

−146

Power Dissipation

(Note 1)

Steady

State

TA = 25°C

PD

125

mW

t

≤ 5 s

166

Pulsed Drain Current

NMOS

tp = 10 ms

IDM

846

mA

PMOS

−488

Source Current (Body Diode)

IS

200

mA

−200

Operating Junction and Storage Temperature

TJ,

TSTG

−55 to

150

°C

Lead Temperature for Soldering Purposes

(1/8

″ from case for 10 s)

TL

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface-mounted on FR4 board using the minimum recommended pad size,

1 oz Cu.

www.onsemi.com

(Bottom View)

PINOUT DIAGRAM

D1

S1

G1

DEVICE SYMBOL

See detailed ordering and shipping information on page 3 of

this data sheet.

ORDERING INFORMATION

V(BR)DSS

RDS(ON) MAX

ID Max

N−Channel

20 V

1.5

W @ 4.5 V

2.0

W @ 2.5 V

220 mA

3.0

W @ 1.8 V

4.5

W @ 1.5 V

MARKING DIAGRAM

L

= Specific Device Code

M

= Date Code

L M

1

D1

G2

S2

D2

G1

S1

3

2

1

6

5

4

XLLGA6

Case 713AC

S2

D2

G2

P−Channel

−20 V

5.0

W @ −4.5 V

6.0

W @ −2.5 V

−127 mA

7.0

W @ −1.8 V

10.0

W @ −1.5 V

NMOS

PMOS

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