NVGS3130NT1G datasheet(4/5 Pages) ONSEMI

Part #	NVGS3130NT1G

Description	Single N-Channel Power MOSFET

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NVGS3130N

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TYPICAL CHARACTERISTICS

Figure 7. Gate−To−Source and Drain−To−Source

Voltage vs. Total Charge

Figure 8. Diode Forward Voltage vs. Current

Figure 9. Maximum Rated Forward Biased

Safe Operating Area

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.1

10

1.0

VGS = 0 V

25

°C

125

°C

TJ = −55°C

QG, TOTAL GATE CHARGE (nC)

ID = 5.6 A

TJ = 25°C

VGS

QGS

QGD

QT

VDS

0.1

1

100

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

1

100

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

10

VGS = 8 V

SINGLE PULSE

TC = 25°C

1 ms

100

ms

10 ms

dc

0.1

0.01

Figure 10. Single Pulse Maximum Power

Dissipation

SINGLE PULSE TIME (s)

1000

10

0

1

5

SINGLE PULSE

RqJA = 110°C/W

TA = 25°C

0

1

2

4

5

3

6

14

12

10

8

6

4

2

0

VDS = 16 V

VDS = 5 V

0

2

4

8

10

6

12

14

16

18

0.2

100

1

2

3

4

Figure 11. Thermal Response

t, TIME (s)

1

0.001

SINGLE PULSE

100

1000

10

0.1

0.001

0.0001

0.000001

0.01

0.1

1

0.01

0.00001

0.2

0.02

D = 0.5

0.05

0.01

0.1

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