NVLUS4C12NTAG datasheet(1/6 Pages) ONSEMI

Part #	NVLUS4C12NTAG

Description	Single N-Channel Power MOSFET

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December, 2014 − Rev. 0

1

Publication Order Number:

NVLUS4C12N/D

NVLUS4C12N

Power MOSFET

30 V, 10.7 A, Single N−Channel,

2.0x2.0x0.55 mm

mCoolt UDFN6 Package

Features

• Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving with

Exposed Drain Pads for Excellent Thermal Conduction

• Ultra Low RDS(on) to Reduce Conduction Losses

• Optimized Gate Charge to Reduce Switching Losses

• Low Capacitance to Minimize Driver Losses

• NV Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• Power Load Switch

• Synch DC−DC Converters

• Wireless Charging Circuit

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain-to-Source Voltage

VDSS

30

V

Gate-to-Source Voltage

VGS

±20

V

Continuous Drain

Current (Note 1)

Steady

State

TA = 25°C

ID

10.7

A

TA = 85°C

7.7

t

≤ 5 s

TA = 25°C

15.1

Power Dissipa-

tion (Note 1)

Steady

State

TA = 25°C

PD

1.54

W

t

≤ 5 s

TA = 25°C

3.1

Continuous Drain

Current (Note 2)

Steady

State

TA = 25°C

ID

6.8

A

TA = 85°C

4.9

Power Dissipation (Note 2)

TA = 25°C

PD

0.63

W

Pulsed Drain Current

tp = 10 ms

IDM

43

A

MOSFET Operating Junction and Storage

Temperature

TJ,

TSTG

-55 to

150

°C

Source Current (Body Diode) (Note 1)

IS

1.55

A

Lead Temperature for Soldering Purposes

(1/8

″ from case for 10 s)

TL

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq

[2 oz] including traces).

2. Surface-mounted on FR4 board using the minimum recommended pad size,

2 oz. Cu.

www.onsemi.com

N−CHANNEL MOSFET

30 V

12 m

W @ 4.5 V

9 m

W @ 10 V

RDS(on) MAX

ID MAX

V(BR)DSS

MOSFET

UDFN6

(

mCOOL])

CASE 517BG

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

AG = Specific Device Code

M = Date Code

G = Pb−Free Package

AGM

G

1

MARKING DIAGRAM

(Top View)

(Note: Microdot may be in either location)

10.7 A

D

S

G

PIN CONNECTIONS

Pin 1

D

S

1

2

3

6

5

4

D

S

D

G

D

S

19 m

W @ 3.3 V

15 m

W @ 3.7 V

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