NVMFS5C404NWFT3G datasheet(4/6 Pages) ONSEMI

Part #	NVMFS5C404NWFT3G

Description	Single N-Channel Power MOSFET

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NVMFS5C404N

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TYPICAL CHARACTERISTICS

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

QG, TOTAL GATE CHARGE (nC)

40

30

20

10

0

1E+0

1E+1

1E+3

90

70

50

40

20

10

0

2

4

6

8

10

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

100

10

1

10

100

1000

0.9

0.8

1.0

0.7

0.6

0.5

0.4

0.3

1

50

Figure 11. Safe Operating Area

Figure 12. IPEAK vs. Time in Avalanche

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TIME IN AVALANCHE (s)

100

10

1

0.1

1

10

100

1000

1

10

VGS = 0 V

TJ = 25°C

f = 1 MHz

CISS

COSS

CRSS

VDS = 20 V

ID = 50 A

TJ = 25°C

QT

QGS

QGD

VGS = 10 V

VDS = 20 V

ID = 50 A

td(off)

td(on)

tf

tr

TJ = 150°C

TJ = 25°C

TJ = −55°C

TJ(initial) = 100°C

TJ(initial) = 25°C

1E−04

1E−02

RDS(on) Limit

Thermal Limit

Package Limit

dc

0.01 ms

0.1 ms

1 ms

10 ms

TC = 25°C

VGS ≤ 10 V

1E+2

1E+4

1E−03

1000

35

25

15

5

1E+5

30

60

TJ = 125°C

5

10

100

80

130

110

100

120

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NVMFS5C404NWFT3G Datasheet(PDF) 4 Page - ON Semiconductor

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