NVMFS6B05N datasheet(2/6 Pages) ONSEMI

Part #	NVMFS6B05N

Description	Single N-Channel Power MOSFET

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NVMFS6B05N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

100

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/

TJ

72.8

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 80 V

TJ = 25°C

10

mA

TJ = 125°C

100

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = 16 V

100

nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

2.0

4.0

V

Negative Threshold Temperature Coefficient

VGS(TH)/TJ

7.91

mV/

°C

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V

ID = 20 A

6.5

8.0

m

W

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1 MHz, VDS = 25 V

3100

pF

Output Capacitance

COSS

570

Reverse Transfer Capacitance

CRSS

28

Total Gate Charge

QG(TOT)

44

nC

Threshold Gate Charge

QG(TH)

VGS = 10 V, VDS = 50 V; ID = 25 A

5.0

Gate−to−Source Charge

QGS

14

Gate−to−Drain Charge

QGD

12

Plateau Voltage

VGP

5.0

V

Gate Resistance

RG

TJ = 25°C

1.0

W

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

td(ON)

VGS = 10 V, VDS = 50 V,

ID = 25 A, RG = 1.0 W

14

ns

Rise Time

tr

43

Turn−Off Delay Time

td(OFF)

39

Fall Time

tf

16

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 25 A

TJ = 25°C

0.9

1.2

V

TJ = 125°C

0.8

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 25 A

58

ns

Charge Time

ta

30

Discharge Time

tb

28

Reverse Recovery Charge

QRR

83

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width

v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

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