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NVMFS6B05N Datasheet(PDF) 4 Page - ON Semiconductor |
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NVMFS6B05N Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 6 page NVMFS6B05N www.onsemi.com 4 TYPICAL CHARACTERISTICS Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) 10 1 1 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) 100 10 1 1 10 100 1000 0.9 0.8 0.7 0.6 0.4 0.3 0 5 10 25 VGS = 0 V TJ = 25°C f = 1 MHz Ciss Coss Crss QT VDS = 50 V ID = 25 A VGS = 10 V td(on) tr tf TJ = 25°C 10 100 1.0 0 2 12 020 5 25 40 45 TJ = 25°C VDS = 50 V ID = 25 A 30 40 50 30 10 10,000 6 8 10 4 Qgs Qgd td(off) 0.5 15 20 35 45 100 1000 15 35 Figure 11. Maximum Rated Forward Biased Safe Operating Area VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 10 1 0.1 0.01 0.1 1 10 100 1000 VGS ≤ 10 V Single Pulse TC = 25°C 500 ms 1 ms 10 ms RDS(on) Limit Thermal Limit Package Limit |
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