NVMFS6B14N

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2

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

100

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

80

mV/

°C

Zero Gate Voltage Drain Current

10

mA

100

Gate−to−Source Leakage Current

100

nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

2.0

4.0

V

Negative Threshold Temperature Coefficient

−8.5

mV/

°C

Drain−to−Source On Resistance

12.2

15

m

W

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

1300

pF

Output Capacitance

260

Reverse Transfer Capacitance

18

Total Gate Charge

20

nC

Threshold Gate Charge

2.2

Gate−to−Source Charge

6.4

Gate−to−Drain Charge

6.5

Plateau Voltage

5.4

V

Gate Resistance

1.0

W

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

9.6

ns

Rise Time

39

Turn−Off Delay Time

16.6

Fall Time

6.8

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.83

1.2

V

0.8

Reverse Recovery Time

45

ns

Charge Time

23

Discharge Time

22

Reverse Recovery Charge

50

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width

v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.