NVMFS6B05NT3G datasheet(5/6 Pages) ONSEMI

Part #	NVMFS6B05NT3G

Description	Single N-Channel Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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NVMFS6B05N

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TYPICAL CHARACTERISTICS

Figure 12. GFS vs. ID

Figure 13. IPEAK vs. TAV

ID, DRAIN CURRENT (A)

TAV, TIME IN AVALANCHE (sec)

100

60

10

0

10

30

50

60

80

0.001

0.0001

1

10

100

Figure 14. Thermal Response

PULSE TIME (sec)

0.01

0.001

10

1

0.0001

0.00001

0.1

0.000001

0.001

0.01

0.1

1

10

100

1000

50% Duty Cycle

20%

10%

5%

2%

1%

Single Pulse

0.01

NTMFS6B05N, 650 mm2, 2 oz, Cu Single Layer Pad

100

°C

25

°C

20

40

70

20

30

40

50

70

80

90

DEVICE ORDERING INFORMATION

Device

Marking

Package

Shipping†

NVMFS6B05NT1G

6B05N

DFN5

(Pb−Free)

1500 / Tape & Reel

NVMFS6B05NWFT1G

6B05WF

DFN5

(Pb−Free, Wettable Flanks)

1500 / Tape & Reel

NVMFS6B05NT3G

6B05N

DFN5

(Pb−Free)

5000 / Tape & Reel

NVMFS6B05NWFT3G

6B05WF

DFN5

(Pb−Free, Wettable Flanks)

5000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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NVMFS6B05NT3G Datasheet(PDF) 5 Page - ON Semiconductor

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