NVTFS4C13N datasheet(1/6 Pages) ONSEMI

Part #	NVTFS4C13N

Description	Single N-Channel Power MOSFET

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July, 2014 − Rev. 1

1

Publication Order Number:

NVTFS4C13N/D

NVTFS4C13N

Power MOSFET

30 V, 9.4 m

W, 40 A, Single N−Channel,

m8FL

Features

• Low RDS(on) to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• NVTFS4C13NWF − Wettable Flanks Product

• NVT Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

30

V

Gate−to−Source Voltage

VGS

±20

V

Continuous Drain

Current RqJA

(Notes 1, 2, 4)

Steady

State

TA = 25°C

ID

14

A

TA = 100°C

10

Power Dissipation RqJA

(Note 1, 2, 4)

TA = 25°C

PD

3.0

W

TA = 100°C

1.5

Continuous Drain

Current RqJC (Note 1,

3, 4)

TA = 25°C

ID

40

TA = 100°C

28

A

Power Dissipation

RqJC (Note 1, 3, 4)

TA = 25°C

PD

26

W

TA = 100°C

13

Pulsed Drain Current

TA = 25°C, tp = 10 ms

IDM

152

A

Operating Junction and Storage Temperature

TJ,

Tstg

−55 to

+175

°C

Source Current (Body Diode)

IS

24

A

Single Pulse Drain−to−Source Avalanche Energy

(TJ = 25°C, IL = 14 Apk, L = 0.1 mH)

EAS

10

mJ

Lead Temperature for Soldering Purposes

(1/8

″ from case for 10 s)

TL

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State (Drain)

(Notes 1 and 4)

RqJC

5.8

°C/W

Junction−to−Ambient – Steady State

(Notes 1 and 2)

RqJA

50

1. The entire application environment impacts the thermal resistance values

shown, they are not constants and are only valid for the particular conditions

noted.

2. Surface−mounted on FR4 board using a 650 mm2 2 oz. Cu pad.

3. Assumes heat−sink sufficiently large to maintain constant case temperature

independent of device power.

4. Continuous DC current rating. Maximum current for pulses as long as

1 second is higher but is dependent on pulse duration and duty cycle.

http://onsemi.com

V(BR)DSS

RDS(ON) MAX

ID MAX

30 V

9.4 m

W @ 10 V

40 A

14 m

W @ 4.5 V

N−CHANNEL MOSFET

G (4)

S (1,2,3)

D (5,6)

WDFN8

(

m8FL)

CASE 511AB

MARKING DIAGRAM

(Note: Microdot may be in either location)

1

XXXX

AYWW

G

D

S

G

See detailed ordering and shipping information on page 5 of

this data sheet.

ORDERING INFORMATION

4C13

= Specific Device Code for

NVMTS4C13N

13WF

= Specific Device Code of

NVTFS4C13NWF

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

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