ESD7504

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Maximum Peak Pulse Current

Working Peak Reverse Voltage

Test Current

Dynamic Resistance

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

Uni−Directional TVS

V

I

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse Working Voltage

I/O Pin to GND

3.3

V

Breakdown Voltage

4.0

5.0

V

Reverse Leakage Current

1.0

mA

Clamping Voltage

(Note 1)

IEC61000−4−2, ±8 kV Contact

See Figures 1 and 2

V

Clamping Voltage

TLP (Note 2)

See Figures 5 through 6

IEC 61000−4−2 Level 2 equivalent

(±4 kV Contact, ±4 kV Air)

10.2

−4.5

V

IEC 61000−4−2 Level 4 equivalent

(±8 kV Contact, ±15 kV Air)

13.7

−8.1

Junction Capacitance

0.55

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. For test procedure see Figures 3 and 4 and application note AND8307/D.

2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.

Figure 1. IEC61000−4−2 +8 kV Contact

Clamping Voltage

Figure 2. IEC61000−4−2 −8 kV Contact

Clamping Voltage

TIME (ns)

TIME (ns)

0

−10

−20

−30

−40

−50

−60

−70

−80

−90

−20

0

20

40

60

80

100

140

120

90

80

70

60

50

40

30

20

10

0

−10

−20

0

20

40

60

80

100

140

120

10