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NRVB140ESFT3G Datasheet(PDF) 2 Page - ON Semiconductor

Part # NRVB140ESFT3G
Description  Surface Mount Schottky Power Rectifier
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NRVB140ESFT3G Datasheet(HTML) 2 Page - ON Semiconductor

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MBR140ESF, NRVB140ESF
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
V
Average Rectified Forward Current
IO
1.0
A
Peak Repetitive Forward Current
IFRM
2.0
A
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM
30
A
Storage Temperature
Tstg
−55 to 175
°C
Operating Junction Temperature
TJ
−55 to 175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
Rtjl
Rtjl
Rtja
Rtja
26
21
325
82
°C/W
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm2).
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 3)
VF
TJ = 25°C
V
(IF = 1.0 A)
0.56
Maximum Instantaneous Reverse Current (Note 3)
IR
TJ = 25°C
mA
(VR = 40 V)
30
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%.


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