OPA657

SBOS197F – DECEMBER 2001 – REVISED AUGUST 2015

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7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage (Total Bipolar Supplies)

±6.5

V

Internal power dissipation

See Thermal Information

Differential input voltage

V

Input voltage

V

175

°C

Storage temperature

–65

125

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE

UNIT

±2000

Charged-device model (CDM), per JEDEC specification JESD22-

Electrostatic discharge

±500

V

Machine Model (MM)

±200

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Total supply voltage

8

10

12

V

Ambient temperature

–40

25

85

°C

7.4 Thermal Information

OPA657

D (SOIC)

DBV (SOT-23)

UNIT

8 PINS

5 PINS

Junction-to-ambient thermal resistance

125

150

°C/W

Junction-to-case (top) thermal resistance

85.2

140.8

°C/W

Junction-to-board thermal resistance

75.9

62.8

°C/W

Junction-to-top characterization parameter

26.2

24.4

°C/W

Junction-to-board characterization parameter

75.4

61.8

°C/W

Junction-to-case (bottom) thermal resistance

—

—

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

4

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