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OPA835IRUNT Datasheet(PDF) 7 Page - Texas Instruments |
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OPA835IRUNT Datasheet(HTML) 7 Page - Texas Instruments |
7 / 57 page OPA835, OPA2835 www.ti.com SLOS713H – JANUARY 2011 – REVISED NOVEMBER 2015 7.5 Thermal Information: OPA2835 OPA2835 D DGS RUN RMC THERMAL METRIC(1) UNIT (SOIC) (VSSOP) (QFN) (UQFN) 8 PINS 10 PINS 10 PINS 10 PINS RθJA Junction-to-ambient thermal resistance 150.1 206 145.8 143.2 °C/W RθJCtop Junction-to-case (top) thermal resistance 83.8 75.3 75.1 49.0 °C/W RθJB Junction-to-board thermal resistance 68.4 96.2 38.9 61.9 °C/W ψJT Junction-to-top characterization parameter 33.0 12.9 13.5 3.3 °C/W ψJB Junction-to-board characterization parameter 67.9 94.6 104.5 61.9 °C/W (1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics application report, SPRA953. 7.6 Electrical Characteristics: VS = 2.7 V Test conditions unless otherwise noted: VS+ = +2.7 V, VS– = 0 V, VOUT = 1 VPP, RF = 0 Ω, RL = 2 kΩ, G = 1 V/V, input and output referenced to mid-supply, VIN_CM = mid-supply – 0.5 V. TA = 25°C, unless otherwise noted. TEST PARAMETER TEST CONDITIONS MIN TYP MAX UNIT LEVEL(1) AC PERFORMANCE VOUT = 100 mVPP, G = 1 51 VOUT = 100 mVPP, G = 2 22.5 Small-signal bandwidth MHz C VOUT = 100 mVPP, G = 5 7.2 VOUT = 100 mVPP, G = 10 3 Gain-bandwidth product VOUT = 100 mVPP, G = 10 30 MHz C Large-signal bandwidth VOUT = 1 VPP, G = 1 24 MHz C Bandwidth for 0.1-dB flatness VOUT = 1 VPP, G = 2 4 MHz C Slew rate, rise VOUT = 1 VSTEP, G = 2 110 V/µs C Slew rate, fall VOUT = 1 VSTEP, G = 2 130 V/µs C Rise time VOUT = 1 VSTEP, G = 2 9.5 ns C Fall time VOUT = 1 VSTEP, G = 2 9 ns C Settling time to 1%, rise VOUT = 1 VSTEP, G = 2 35 ns C Settling time to 1%, fall VOUT = 1 VSTEP, G = 2 30 ns C Settling time to 0.1%, rise VOUT = 1 VSTEP, G = 2 60 ns C Settling time to 0.1%, fall VOUT = 1 VSTEP, G = 2 65 ns C Settling time to 0.01%, rise VOUT = 1 VSTEP, G = 2 120 ns C Settling time to 0.01%, rise VOUT = 1 VSTEP, G = 2 90 ns C 0.5%/0.2 Overshoot/Undershoot VOUT = 1 VSTEP, G = 2 C % f = 10 kHz, VIN_CM = mid-supply – 0.5 V –133 Second-order harmonic distortion f = 100 kHz, VIN_CM = mid-supply – 0.5 V –110 dBc C f = 1 MHz, VIN_CM = mid-supply – 0.5 V –73 f = 10 kHz, VIN_CM = mid-supply – 0.5 V –137 Third-order harmonic distortion f = 100 kHz, VIN_CM = mid-supply – 0.5 V –125 dBc C f = 1 MHz, VIN_CM = mid-supply – 0.5 V –78 f = 1 MHz, 200-kHz Tone Spacing, Second-order intermodulation distortion VOUT Envelope = 1 VPP, –75 dBc C VIN_CM = mid-supply – 0.5 V f = 1 MHz, 200-kHz Tone Spacing, Third-order intermodulation distortion VOUT Envelope = 1 VPP, –81 dBc C VIN_CM = mid-supply – 0.5 V Input voltage noise f = 100 kHz 9.3 nV/ √Hz C Voltage noise 1/f corner frequency 147 Hz C (1) Test levels (all values set by characterization and simulation): (A) 100% tested at 25°C; over temperature limits by characterization and simulation. (B) Not tested in production; limits set by characterization and simulation. (C) Typical value only for information. Copyright © 2011–2015, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Links: OPA835 OPA2835 |
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