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OPA835IRUNT Datasheet(PDF) 7 Page - Texas Instruments

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Part # OPA835IRUNT
Description  Ultralow-Power, Rail-to-Rail Out, Negative Rail In, VFB Op Amp
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

OPA835IRUNT Datasheet(HTML) 7 Page - Texas Instruments

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OPA835, OPA2835
www.ti.com
SLOS713H – JANUARY 2011 – REVISED NOVEMBER 2015
7.5 Thermal Information: OPA2835
OPA2835
D
DGS
RUN
RMC
THERMAL METRIC(1)
UNIT
(SOIC)
(VSSOP)
(QFN)
(UQFN)
8 PINS
10 PINS
10 PINS
10 PINS
RθJA
Junction-to-ambient thermal resistance
150.1
206
145.8
143.2
°C/W
RθJCtop
Junction-to-case (top) thermal resistance
83.8
75.3
75.1
49.0
°C/W
RθJB
Junction-to-board thermal resistance
68.4
96.2
38.9
61.9
°C/W
ψJT
Junction-to-top characterization parameter
33.0
12.9
13.5
3.3
°C/W
ψJB
Junction-to-board characterization parameter
67.9
94.6
104.5
61.9
°C/W
(1)
For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics application report,
SPRA953.
7.6 Electrical Characteristics: VS = 2.7 V
Test conditions unless otherwise noted: VS+ = +2.7 V, VS– = 0 V, VOUT = 1 VPP, RF = 0 Ω, RL = 2 kΩ, G = 1 V/V, input and
output referenced to mid-supply, VIN_CM = mid-supply – 0.5 V. TA = 25°C, unless otherwise noted.
TEST
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
LEVEL(1)
AC PERFORMANCE
VOUT = 100 mVPP, G = 1
51
VOUT = 100 mVPP, G = 2
22.5
Small-signal bandwidth
MHz
C
VOUT = 100 mVPP, G = 5
7.2
VOUT = 100 mVPP, G = 10
3
Gain-bandwidth product
VOUT = 100 mVPP, G = 10
30
MHz
C
Large-signal bandwidth
VOUT = 1 VPP, G = 1
24
MHz
C
Bandwidth for 0.1-dB flatness
VOUT = 1 VPP, G = 2
4
MHz
C
Slew rate, rise
VOUT = 1 VSTEP, G = 2
110
V/µs
C
Slew rate, fall
VOUT = 1 VSTEP, G = 2
130
V/µs
C
Rise time
VOUT = 1 VSTEP, G = 2
9.5
ns
C
Fall time
VOUT = 1 VSTEP, G = 2
9
ns
C
Settling time to 1%, rise
VOUT = 1 VSTEP, G = 2
35
ns
C
Settling time to 1%, fall
VOUT = 1 VSTEP, G = 2
30
ns
C
Settling time to 0.1%, rise
VOUT = 1 VSTEP, G = 2
60
ns
C
Settling time to 0.1%, fall
VOUT = 1 VSTEP, G = 2
65
ns
C
Settling time to 0.01%, rise
VOUT = 1 VSTEP, G = 2
120
ns
C
Settling time to 0.01%, rise
VOUT = 1 VSTEP, G = 2
90
ns
C
0.5%/0.2
Overshoot/Undershoot
VOUT = 1 VSTEP, G = 2
C
%
f = 10 kHz, VIN_CM = mid-supply – 0.5 V
–133
Second-order harmonic distortion
f = 100 kHz, VIN_CM = mid-supply – 0.5 V
–110
dBc
C
f = 1 MHz, VIN_CM = mid-supply – 0.5 V
–73
f = 10 kHz, VIN_CM = mid-supply – 0.5 V
–137
Third-order harmonic distortion
f = 100 kHz, VIN_CM = mid-supply – 0.5 V
–125
dBc
C
f = 1 MHz, VIN_CM = mid-supply – 0.5 V
–78
f = 1 MHz, 200-kHz Tone Spacing,
Second-order intermodulation distortion
VOUT Envelope = 1 VPP,
–75
dBc
C
VIN_CM = mid-supply – 0.5 V
f = 1 MHz, 200-kHz Tone Spacing,
Third-order intermodulation distortion
VOUT Envelope = 1 VPP,
–81
dBc
C
VIN_CM = mid-supply – 0.5 V
Input voltage noise
f = 100 kHz
9.3
nV/
√Hz
C
Voltage noise 1/f corner frequency
147
Hz
C
(1)
Test levels (all values set by characterization and simulation): (A) 100% tested at 25°C; over temperature limits by characterization and
simulation. (B) Not tested in production; limits set by characterization and simulation. (C) Typical value only for information.
Copyright © 2011–2015, Texas Instruments Incorporated
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