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ERJ-2RKF9101X Datasheet(PDF) 4 Page - Integrated Device Technology |
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ERJ-2RKF9101X Datasheet(HTML) 4 Page - Integrated Device Technology |
4 / 26 page F1423 Zero-Distortion TM, TX Amplifier 4 Rev O 11/6/2015 F1423 SPECIFICATION - GENERAL See F1423 Typical Application Circuit. Unless otherwise stated, specifications apply when operated as a TX RF Amplifier, VCC = +5.0 V, TC = +25 °C. Parameter Symbol Condition Min Typ Max Units Logic Input High VIH 1.1 V Logic Input Low VIL 0.63 Logic Current ISTBY STBY pin -10 +10 µA IBAND Band_Sel pin -10 +10 Supply Current 3 ICC_LB Low-band bias setting 103 mA ICC_MB Mid-band bias setting 120 ICC_HB High-band bias setting 120 ICC_BB Broad-band bias setting 120 135 1 Standby Current ICC_STBY STBY = 5V 0.8 1.0 mA Power ON switching time TON 50% STBY to RF output settled to within ±0.5dB 1 µs Power OFF switching time TOFF 50% STBY to DC standby current settled to within ±2mA of final ICC value 1 µs Note 1: Items in min/max columns in bold italics are Guaranteed by Test. Note 2: Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization. Note 3: Use external resistors to set amplifier bias currents to optimize device linearity. See Table 2. |
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