NTSB40100CT-1G datasheet(2/8 Pages) ONSEMI

Part #	NTSB40100CT-1G

Description	Very Low Forward Voltage Trench-based Schottky Rectifier

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Manufacturer	ONSEMI [ON Semiconductor]

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NTST40100CTG, NTSB40100CT−1G, NTSB40100CTG, NTSJ40100CTG

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MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

100

V

Average Rectified Forward Current

(Rated VR, TC = 120°C)

Per device

Per diode

IF(AV)

40

20

A

Peak Repetitive Forward Current

(Rated VR, Square Wave, 20 kHz, TC = 125°C)

Per device

Per diode

IFRM

60

30

A

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM

250

A

Operating Junction Temperature

TJ

−40 to +150

°C

Storage Temperature

Tstg

−40 to +150

°C

Voltage Rate of Change (Rated VR)

dv/dt

10,000

V/ms

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Rating

Symbol

NTST40100CTG,

NTSB40100CT−1G

NTSB40100CTG

NTSJ40100CTG

Unit

Maximum Thermal Resistance per Diode

Junction−to−Case

Junction−to−Ambient

RqJC

RqJA

1.3

70

0.79

46.3

4.0

105

°C/W

ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)

Rating

Symbol

Typ

Max

Unit

Maximum Instantaneous Forward Voltage (Note 1)

(IF = 5 A, TJ = 25°C)

(IF = 10 A, TJ = 25°C)

(IF = 20 A, TJ = 25°C)

(IF = 5 A, TJ = 125°C)

(IF = 10 A, TJ = 125°C)

(IF = 20 A, TJ = 125°C)

vF

0.46

0.56

0.71

0.41

0.52

0.63

−

0.80

−

0.68

V

Maximum Instantaneous Reverse Current (Note 1)

(VR = 70 V, TJ = 25°C)

(VR = 70 V, TJ = 125°C)

(Rated dc Voltage, TJ = 25°C)

(Rated dc Voltage, TJ = 125°C)

IR

12

8.0

20

1000

45

mA

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%

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NTSB40100CT-1G Datasheet(PDF) 2 Page - ON Semiconductor

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