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DMN62D0U-7 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN62D0U-7 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page DMN62D0U Document number: DS38023 Rev. 1 - 2 2 of 6 www.diodes.com July 2015 © Diodes Incorporated DMN62D0U Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25°C TA = +70°C ID 380 300 mA t<5s TA = +25°C TA = +70°C ID 430 340 mA Maximum Continuous Body Diode Forward Current (Note 6) IS 0.4 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6) IDM 1.2 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 380 mW Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 338 °C/W t<5s 292 Total Power Dissipation (Note 6) PD 590 mW Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 216 °C/W t<5s 177 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 60 — — V VGS = 0V, ID = 10µA Zero Gate Voltage Drain Current IDSS — — 1.0 µA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS — — ±10 µA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 0.5 — 1.0 V VDS = 10V, ID = 250µA Static Drain-Source On-Resistance RDS(ON) — 1.2 1.4 1.8 2.0 2.5 3.0 Ω VGS = 4.5V, ID = 0.1A VGS = 2.5V, ID = 0.05A VGS = 1.8V, ID = 0.05A Forward Transconductance |Yfs| — 1.8 — mS VDS =10V, ID = 0.2A Diode Forward Voltage VSD — 0.8 1.3 V VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 32 — pF VDS = 30V, VGS = 0V f = 1.0MHz Output Capacitance Coss — 3.9 — pF Reverse Transfer Capacitance Crss — 2.4 — pF Gate Resistance Rg — 101 — Ω f = 1MHz , VGS = 0V, VDS = 0V Total Gate Charge Qg — 0.5 — nC VGS = 4.5V, VDS = 10V, ID = 250mA Gate-Source Charge Qgs — 0.09 — nC Gate-Drain Charge Qgd — 0.09 — nC Turn-On Delay Time tD(ON) — 2.4 — ns VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA Turn-On Rise Time tR — 2.5 — ns Turn-Off Delay Time tD(OFF) — 22.6 — ns Turn-Off Fall Time tF — 12.5 — ns Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. |
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