DMTH6004SCTB

Document number: DS37382 Rev. 5 - 2

2 of 7

www.diodes.com

November 2015

© Diodes Incorporated

DMTH6004SCTB

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

60

V

Gate-Source Voltage

20

V

Continuous Drain Current (Note 6)

(Note 9)

100

A

100

Maximum Continuous Body Diode Forward Current (Note 6)

100

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle=1%)

200

A

Avalanche Current, L=0.2mH

45

A

Avalanche Energy, L=0.2mH

200

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

4.7

W

Thermal Resistance, Junction to Ambient (Note 5)

32

°C/W

Total Power Dissipation (Note 6)

136

W

Thermal Resistance, Junction to Case (Note 6)

1.1

°C/W

Operating and Storage Temperature Range

-55 to +175

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

60

—

—

V

Zero Gate Voltage Drain Current

—

—

1

µA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

2

—

4

V

Static Drain-Source On-Resistance

—

2.9

3.4

m

Ω

Diode Forward Voltage

—

—

1.3

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

4,556

—

pF

f = 1MHz

Output Capacitance

—

1,383

—

Reverse Transfer Capacitance

—

105.2

—

Gate Resistance

—

0.66

—

Ω

Total Gate Charge

—

95.4

—

nC



Gate-Source Charge

—

21.6

—

Gate-Drain Charge

—

20.4

—

Turn-On Delay Time

—

13.2

—

ns

Turn-On Rise Time

—

11.7

—

Turn-Off Delay Time

—

31

—

Turn-Off Fall Time

—

12

—

Reverse Recovery Time

—

50.5

—

ns

Reverse Recovery Charge

—

80.8

—

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.

6. Thermal resistance from junction to soldering point (on the exposed drain pad).

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

9. Package limited.