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DMTH6010LPS-13 Datasheet(PDF) 3 Page - Diodes Incorporated

Part # DMTH6010LPS-13
Description  60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMTH6010LPS-13 Datasheet(HTML) 3 Page - Diodes Incorporated

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DMTH6010LPS
Document number: DS37354 Rev. 5 - 2
3 of 7
www.diodes.com
November 2015
© Diodes Incorporated
DMTH6010LPS
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0
1
2
3
4
5
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS=2.2V
V
GS=2.5V
V
GS=3.0V
V
GS=3.5V
V
GS=4.0V
V
GS=4.5V
V
GS=10V
0.004
0.005
0.006
0.007
0.008
0.009
0.01
0
2
4
6
8
10
12
14
16
18
20
I
D, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
V
GS=4.5V
V
GS=10V
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.02
0
5
10
15
20
25
30
I
D, DRAIN CURRENT (A)
Figure 4. Typical On-Resistance vs. Drain Current and
Temperature
V
GS= 4.5V
-55
℃
25
℃
85
℃
175
℃
150
℃
125
℃
0.4
0.8
1.2
1.6
2
-50
-25
0
25
50
75
100
125
150
175
T
J, JUNCTION TEMPERATURE (℃)
Figure 5. On-Resistance Variation with Temperature
V
GS=5V, ID=5A
V
GS=10V, ID=10A
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.02
-50
-25
0
25
50
75
100
125
150
175
T
J, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
V
GS=5V, ID=5A
V
GS=10V, ID=10A
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS= 5V
-55
℃
25
℃
85
℃
125
℃
175
℃
150
℃


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