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CXK77P18E160GB-4AE Datasheet(PDF) 5 Page - Sony Corporation |
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CXK77P18E160GB-4AE Datasheet(HTML) 5 Page - Sony Corporation |
5 / 25 page SONY® CXK77P36E160GB / CXK77P18E160GB Preliminary 16Mb LW R-L and 8Mb LW R-L w/ EC, rev 1.1 5 / 25 March 2, 2001 •Clock Truth Table •Dynamic M2 Mode Pin State Changes Although M2 is defined as a static input (that is, it must be tied “high” or “low” at power-up), in some instance (such as during device testing) it may be desirable to change its state dynamically (that is, without first powering off the SRAM) while preserving the contents of the memory array. If so, the following criteria must be met: 1. At least two (2) consecutive deselect operations must be initiated prior to changing the state of M2, to ensure that the most recent read or write operation completes successfully. 2. At least thirty-two (32) consecutive deselect operations must be initiated after changing the state of M2 before any read or write operations can be initiated, to allow the SRAM sufficient time to recognize the change in state. •Sleep (Power Down) Mode Sleep (power down) mode is provided through the asynchronous input signal ZZ. When ZZ is asserted (high), the output drivers will go to a Hi-Z state, and the SRAM will begin to draw standby current. Contents of the memory array will be preserved. An enable time (tZZE) must be met before the SRAM is guaranteed to be in sleep mode, and a recovery time (tZZR) must be met before the SRAM can resume normal operation. •Programmable Impedance Output Drivers These devices have programmable impedance output drivers. The output impedance is controlled by an external resistor, RQ, connected between the SRAM’s ZQ pin and VSS, and is equal to one-fifth the value of this resistor, nominally. See the DC Electrical Characteristics section for further information. The output impedance is updated whenever the output drivers are in a Hi-Z state. Consequently, impedance updates will occur during write and deselect operations. At power up, 8192 clock cycles followed by an impedance update via one of the three methods described above are required to ensure that the output impedance has reached the desired value. After power up, periodic impedance updates via write or deselect operations are also required to ensure that the output imped- ance remains within specified tolerances. •Power-Up Sequence For reliability purposes, Sony recommends that power supplies power up in the following sequence: VSS, VDD, VDDQ, VREF, and Inputs. VDDQ should never exceed VDD. If this power supply sequence cannot be met, a large bypass diode may be required between VDD and VDDQ. Please contact Sony Memory Application Department for further information. K ZZ SS (tn) SW (tn) SBWx (tn) Operation DQ (tn) DQ (tn+1) X H X X X Sleep (Power Down) Mode Hi - Z Hi - Z L →H L H X X Deselect Hi - Z X L →H L L H X Read Q(tn) X L →H L L L L Write All Bytes Hi - Z D(tn) L →H L L L X Write Bytes With SBWx = L Hi - Z D(tn) L →H L L L H Abort Write Hi - Z X |
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Similar Description - CXK77P18E160GB-4AE |
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