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JCT630B Datasheet(PDF) 2 Page - JIEJIE MICROELECTRONICS CO.,Ltd |
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JCT630B Datasheet(HTML) 2 Page - JIEJIE MICROELECTRONICS CO.,Ltd |
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2 / 5 page  JCT630/830 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 2 / 5- http://www.jjwdz.com Average gate power dissipation PG(AV) 1 W Peak gate power PGM 5 W ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Value Unit MIN. TYP. MAX. IGT VD=12V RL=33Ω - - 15 mA VGT - - 1.5 V VGD VD=VDRM Tj=125℃ RL=3.3KΩ 0.2 - - V IL IG=1.2IGT - - 50 mA IH IT=500mA - - 30 mA dV/dt VD=2/3VDRM Gate Open Tj=125℃ 500 - - V /μs STATIC CHARACTERISTICS Symbol Parameter Value(MAX) Unit VTM ITM=55A tp=380μs Tj=25℃ 1.55 V IDRM VD=VDRM VR=VRRM Tj=25℃ 10 μA IRRM Tj=125℃ 1 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) junction to case(AC) TO-220A 2.1 ℃/W TO-220B 1.7 TO-220F 3.4 ORDERING INFORMATION J CT 6 30 A JieJie Microelectronics Co.,Ltd SCRs 6:VDRM /VRRM ≥600V 8:VDRM /VRRM ≥800V IT(RMS):30A A:TO-220A B:TO-220B F:TO-220F |
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