 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
JCT810B Datasheet(PDF) 2 Page - JIEJIE MICROELECTRONICS CO.,Ltd |
|
||||||||||||||||||||||||||||||
JCT810B Datasheet(HTML) 2 Page - JIEJIE MICROELECTRONICS CO.,Ltd |
|
|
2 / 6 page  JCT610/810 Series JieJie Microelectronics CO. , Ltd TEL：+86-513-83639777 - 2 / 6- http://www.jjwdz.com RMS on-state current TO-220A(Ins) / TO-220F(Ins) (TC=85℃) IT(RMS) 10 A Non repetitive surge peak on-state current (tp=10ms) ITSM 120 A I 2t value for fusing (tp=10ms) I 2t 72 A 2s Critical rate of rise of on-state current (IG=2×IGT) dI/dt 50 A /μs Peak gate current IGM 4 A Average gate power dissipation PG(AV) 1 W Peak gate power PGM 5 W ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Value Unit MIN. TYP. MAX. IGT VD=12V RL=33Ω - - 10 mA VGT - - 1.5 V VGD VD=VDRM Tj=125℃ RL=3.3KΩ 0.2 - - V IL IG=1.2IGT - - 25 mA IH IT=500mA - - 15 mA dV/dt VD=2/3VDRM Gate Open Tj=125℃ 50 - - V /μs STATIC CHARACTERISTICS Symbol Parameter Value(MAX) Unit VTM ITM=20A tp=380μs Tj=25℃ 1.55 V IDRM VD=VDRM VR=VRRM Tj=25℃ 5 μA IRRM Tj=125℃ 1 mA |
Similar Part No. - JCT810B |
|
Similar Description - JCT810B |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
