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JCT810B Datasheet(PDF) 2 Page - JIEJIE MICROELECTRONICS CO.,Ltd |
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JCT810B Datasheet(HTML) 2 Page - JIEJIE MICROELECTRONICS CO.,Ltd |
2 / 6 page JCT610/810 Series JieJie Microelectronics CO. , Ltd TEL:+86-513-83639777 - 2 / 6- http://www.jjwdz.com RMS on-state current TO-220A(Ins) / TO-220F(Ins) (TC=85℃) IT(RMS) 10 A Non repetitive surge peak on-state current (tp=10ms) ITSM 120 A I 2t value for fusing (tp=10ms) I 2t 72 A 2s Critical rate of rise of on-state current (IG=2×IGT) dI/dt 50 A /μs Peak gate current IGM 4 A Average gate power dissipation PG(AV) 1 W Peak gate power PGM 5 W ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Value Unit MIN. TYP. MAX. IGT VD=12V RL=33Ω - - 10 mA VGT - - 1.5 V VGD VD=VDRM Tj=125℃ RL=3.3KΩ 0.2 - - V IL IG=1.2IGT - - 25 mA IH IT=500mA - - 15 mA dV/dt VD=2/3VDRM Gate Open Tj=125℃ 50 - - V /μs STATIC CHARACTERISTICS Symbol Parameter Value(MAX) Unit VTM ITM=20A tp=380μs Tj=25℃ 1.55 V IDRM VD=VDRM VR=VRRM Tj=25℃ 5 μA IRRM Tj=125℃ 1 mA |
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