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LM7332MMX Datasheet(PDF) 6 Page - Texas Instruments

Part # LM7332MMX
Description  Operational Amplifier
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

LM7332MMX Datasheet(HTML) 6 Page - Texas Instruments

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LM7332
SNOSAV4B – APRIL 2008 – REVISED JANUARY 2016
www.ti.com
5-V Electrical Characteristics (continued)
Unless otherwise specified, all limits are ensured for TA = 25°C, V
+ = 5 V, V= 0 V, V
CM = 0.5 V, VO = 2.5 V, and RL > 1 MΩ
to 2.5 V.
(1)
PARAMETER
TEST CONDITIONS
MIN (2)
TYP (3)
MAX (2)
UNIT
GBWP
Gain bandwidth product
f = 50 kHz
19.3
MHz
en
Input-referred voltage noise
f = 2 kHz
14.8
nV/
√HZ
in
Input-referred current noise
f = 2 kHz
1.35
pA/
√HZ
AV = +2, RL = 100 kΩ, f = 1 kHz,
THD+N
Total harmonic distortion + noise
−84
dB
VO = 4 VPP
CT Rej.
Crosstalk rejection
f = 3 MHz, Driver RL = 10 kΩ
68
dB
6.6
±5-V Electrical Characteristics
Unless otherwise specified, all limits are ensured for TA = 25°C, V
+ = +5 V, V= −5 V, V
CM = 0 V, VO = 0 V, and RL > 1 MΩ to
0 V.
(1)
PARAMETER
TEST CONDITIONS
MIN (2)
TYP (3)
MAX (2)
UNIT
VCM = −4.5 V and VCM = 4.5 V
−4
±1.6
4
VOS
Input offset voltage
mV
At the temperature extremes
−5
5
Input offset voltage temperature
TC VOS
VCM = −4.5 V and VCM = 4.5 V
(4)
±2
µV/°C
drift
See (5)
−2
±1
2
IB
Input bias current
µA
At the temperature extremes
−2.5
2.5
20
250
IOS
Input offset current
nA
At the temperature extremes
300
−5 V ≤ VCM ≤ 3 V
74
88
At the temperature extremes
75
CMRR
Common-mode rejection ratio
dB
−5 V ≤ VCM ≤ 5 V
70
74
At the temperature extremes
65
5 V
≤ V+ ≤ 30 V, VCM = −4.5 V
78
100
PSRR
Power supply rejection ration
dB
At the temperature extremes
74
CMRR > 50 dB
5.1
–5.3
–5.1
Input common-mode voltage
CMVR
V
range
At the temperature extremes
5
5.3
–5.1
−4 V ≤ VO ≤ 4 V
72
80
RL = 10 kΩ to 0 V
AVOL
Large signal voltage gain
dB
At the temperature extremes
70
(1)
Electrical Characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical
tables under conditions of internal self-heating where TJ > TA.
(2)
All limits are ensured by testing or statistical analysis.
(3)
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
(4)
Offset voltage temperature drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
(5)
Positive current corresponds to current flowing in the device.
6
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