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OPA2211MDRGTEP Datasheet(PDF) 4 Page - Texas Instruments

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Part # OPA2211MDRGTEP
Description  Noise, Low-Power, Precision Operational Amplifier
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

OPA2211MDRGTEP Datasheet(HTML) 4 Page - Texas Instruments

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OPA2211-EP
SBOS761 – NOVEMBER 2015
www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Supply voltage
VS = (V+) – (V–)
40
V
Input voltage
(V–) – 0.5
(V+) + 0.5
V
Input current (any pin except power-supply pins)
–10
10
mA
Output short-circuit(2)
Continuous
Junction temperature, TJ
150
°C
Storage temperature, Tstg
–65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
Short-circuit to VS / 2 (ground in symmetrical dual supply setups), one amplifier per package.
6.2 ESD Ratings
VALUE
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±3000
Electrostatic
V(ESD)
V
discharge
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±1000
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
Supply voltage (V+ – V–)
4.5 (±2.25)
36 (±18)
V
Operating temperature, TJ
–55
125
°C
6.4 Thermal Information
OPA2211-EP
THERMAL METRIC(1)
DRG (WSON)
UNIT
8 PINS
RθJA
Junction-to-ambient thermal resistance
47.3
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
51.8
°C/W
RθJB
Junction-to-board thermal resistance
21.8
°C/W
ψJT
Junction-to-top characterization parameter
0.7
°C/W
ψJB
Junction-to-board characterization parameter
21.9
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
4.2
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
4
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Copyright © 2015, Texas Instruments Incorporated
Product Folder Links: OPA2211-EP


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