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DMG2305UXQ Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMG2305UXQ
Description  P-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMG2305UXQ Datasheet(HTML) 2 Page - Diodes Incorporated

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DMG2305UXQ
Document number: DS38238 Rev. 1 - 2
2 of 6
www.diodes.com
September 2015
© Diodes Incorporated
DMG2305UXQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
-4.2
-3.3
A
t<10s
TA = +25°C
TA = +70°C
ID
-5.0
-4.0
A
Pulsed Drain Current (Note 7)
IDM
-10
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 6)
PD
1.4
W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RθJA
90
°C/W
t<10s
64
°C/W
Thermal Resistance, Junction to Case (Note 8)
RθJC
33
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
-20
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
TJ = +25°C
IDSS
-1.0
µA
VDS = -20V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(th)
-0.5
-0.9
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS(ON)
40
52
m
VGS = -4.5V, ID = -4.2A
52
100
VGS = -2.5V, ID = -3.4A
68
200
VGS = -1.8V, ID = -2A
Forward Transfer Admittance
|Yfs|
9
S
VDS = -5V, ID = -4A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
808
pF
VDS = -15V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
85
pF
Reverse Transfer Capacitance
Crss
77
pF
Gate Resistance
RG
15.2
VGS = 0V, VDS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 9)
Total Gate Charge
Qg
10.2
nC
VGS = -4.5V, VDS = -4V,
ID = -3.5A
Gate-Source Charge
Qgs
1.3
nC
Gate-Drain Charge
Qgd
2.2
nC
Turn-On Delay Time
tD(on)
10.8
nS
VDS = -4V, VGS = -4.5V,
RG = 6Ω, ID = -1A
Turn-On Rise Time
tr
13.7
nS
Turn-Off Delay Time
tD(off)
79.3
nS
Turn-Off Fall Time
tf
34.7
nS
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing


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