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DMN3032LFDBQ-7 Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMN3032LFDBQ-7
Description  DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN3032LFDBQ-7 Datasheet(HTML) 4 Page - Diodes Incorporated

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DMN3032LFDBQ
Document number: DS37981 Rev. 2 - 2
4 of 7
www.diodes.com
October 2015
© Diodes Incorporated
DMN3032LFDBQ
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
VGS=10V, ID=5.0A
VGS=4.5V, ID=3.0A
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Junction
Temperature
ID=250mA
ID=1mA
0
2
4
6
8
10
12
14
16
18
20
0
0.3
0.6
0.9
1.2
1.5
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
VGS=0V,
TA=-55℃
VGS=0V, TA=25℃
VGS=0V, TA=85℃
VGS=0V, TA=125℃
VGS=0V, TA=150℃
10
100
1000
0
5
10
15
20
25
30
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
Ciss
Coss
Crss
0
2
4
6
8
10
0
2
4
6
8
10
12
Qg,TOTAL GATE CHARGE (nC)
Figure 11. Gate Charge
VDS=15V, ID=3.6A
0.1
1
10
100
1000
10000
0
5
10
15
20
25
30
V
DS, Drain-SOURCE VOLTAGE (V)
Figure 12. Typical Drain-Source Leakge Current vs.
Voltage
TA=25℃
TA=85℃
TA=125℃
TA=150℃


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