 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
DMP1011UCB9-7 Datasheet(PDF) 2 Page - Diodes Incorporated |
|
||||||||||||||||||||||||||||||
DMP1011UCB9-7 Datasheet(HTML) 2 Page - Diodes Incorporated |
|
|
2 / 6 page  DMP1011UCB9 Document number: DS37852 Rev. 2 - 2 2 of 6 www.diodes.com July 2015 © Diodes Incorporated DMP1011UCB9 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -8 V Gate-Source Voltage VGSS -6 V Continuous Drain Current (Note 5) VGS = -4.5V Steady State TA = +25°C TA = +70°C ID -10 -8 A Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25°C TA = +70°C ID -7.4 -6.0 A Pulsed Drain Current ( Pulse duration 10μs, duty cycle ≤1%) IDM -50 A Continuous Source Pin Current (Note 6) IS -2 Pulsed Source Pin Current (Pulse duration 10µs, duty cycle ≤1%) ISM -15 Continuous Gate Current IG -0.5 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD 0.89 W Total Power Dissipation (Note 6) PD 1.57 W Thermal Resistance, Junction to Ambient (Note 5) RθJA +142.1 °C/W Thermal Resistance, Junction to Ambient (Note 6) RθJA +80.5 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -8 — — V VGS = 0V, ID = -250μA Gate to Source Voltage BVSGS -6 — — V VDS = 0V, ID = -250μA Zero Gate Voltage Drain Current @TC = +25°C IDSS — — -1 μA VDS = -4.0V, VGS = 0V Gate-Source Leakage IGSS — — -100 nA VGS = -4.0V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) -0.4 -0.8 -1.1 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) — 8.2 10 m Ω VGS = -4.5V, ID = -2A 10 13 VGS = -3.0V, ID = -2A 11 14 VGS = -2.5V, ID = -2A Forward Transfer Admittance |Yfs| — 16.8 — S VDS = -4V, ID = -2A Diode Forward Voltage (Note 6) VSD — -0.7 -1 V VGS = 0V, IS = -2A Reverse Recovery Charge Qrr — 6.3 — nC Vdd = -5V, IF = -2A, di/dt = 200A/μs Reverse Recovery Time trr — 18.5 — ns DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 817 1,060 pF VDS = -4V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 595 770 pF Reverse Transfer Capacitance Crss — 269 350 pF Series Gate Resistance RG — 1.9 — Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (4.5V) Qg — 8.1 10.5 nC VGS = -4.5V, VDS = -4V, ID = -2A Gate-Source Charge Qgs — 0.9 — nC Gate-Drain Charge Qgd — 1.8 — nC Turn-On Delay Time tD(on) — 6.2 10 ns VDD = -4V, VGS = -4.5V, IDS = -2A, RG = 10Ω, Turn-On Rise Time tr — 22.6 — ns Turn-Off Delay Time tD(off) — 30.1 48 ns Turn-Off Fall Time tf — 22.7 — ns Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 6. Device mounted on FR4 material with 1-inch 2 (6.45cm2), 2oz (0.071mm thick) Cu. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. |
Similar Part No. - DMP1011UCB9-7 |
|
Similar Description - DMP1011UCB9-7 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
