DMC2450UV

Document number: DS38197 Rev. 1 - 2

8 of 10

www.diodes.com

September 2015

© Diodes Incorporated

DMC2450UV

0

20

40

60

80

0

5

10

15

20

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 21 Typical Junction Capacitance

f = 1MHz

C

oss

0.1

10

100

1,000

1

-V

, DRAIN-SOURCE VOLTAGE(V)

Fig. 22 Typical Drain-Source Leakage Current vs. Voltage

DS

0

4

8

12

16

20

T = 1

A

25 C



T = 8

A

5C



T = 2

A

5C



T = 1

A

50 C



0

1

2

3

4

5

6

7

8

0

0.1 0.2 0.3 0.4 0.5

0.6 0.7 0.8 0.9 1.0

Fig. 23 Gate-Charge Characteristics

Q , TOTAL GATE CHARGE (nC)

g

V

= -10V

I = -250mA

DS

D

0.01

0.1

1

10

100

0.001

0.01

0.1

1

10

-V

, DRAIN-SOURCE VOLTAGE (V)

Fig. 24 SOA, Safe Operation Area

DS

R

Limited

DS(on)

DC

P

= 10s

W

P

= 1s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100µs

W

P

= 10 s

W

µ

0.000001

0.0001

0.001

0.01

0.1

1

10

100

1,000

Fig. 25 Transient Thermal Response

t , PULSE DURATION TIME (s)

1

0.00001

0.001

0.01

0.1

1

T - T = P * R

(t)

Duty Cycle, D = t /t

J

A

JA

12



R

(t) = r(t) *

JA

R

R

= 275°C/W





JA

JA

P(pk)

D = 0.7

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

D = 0.5