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DMN2028UVT-13 Datasheet(PDF) 4 Page - Diodes Incorporated |
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DMN2028UVT-13 Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 6 page DMN2028UVT Document number: DS37128 Rev. 1 - 2 4 of 6 www.diodes.com May 2015 © Diodes Incorporated DMN2028UVT 0 0.3 0.6 0.9 1.2 1.5 -50 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE (℃) Figure 7. Gate Threshold Variation vs. Temperature I D=250μA I D=1mA 0.01 0.1 1 10 0.4 0.5 0.6 0.7 0.8 0.9 1 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 8. Diode Forward Voltage vs. Current T A=25℃ 0.01 0.1 1 10 100 0.1 1 10 100 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 10. SOA, Safe Operation Area T J(MAX)=150℃ T A=25℃ Single Pulse DUT on 1*MRP board V GS=8V R DS(ON) Limited DC P W=10s P W=1s P W=100ms P W=10ms P W=1ms P W=100μs 10 100 1000 10000 0 5 10 15 20 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Typical Junction Capacitance f=1MHz Ciss Coss Crss 0.001 0.01 0.1 1 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 11. Transient Thermal Resistance RθJA(t)=r(t) * RθJA RθJA=101℃/W Duty Cycle, D=t1 / t2 D=Single Pulse D=0.005 D=0.01 D=0.02 D=0.05 D=0.1 D=0.3 D=0.5 D=0.7 D=0.9 |
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