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BCX17 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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BCX17 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 4 page © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BCX17 Rev. 1.1.0 2 Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Note: 1. Alumina = 0.4 inch x 0.3 inch x 0.024 inch 9.5% alumina. Electrical Characteristics Values are at TC = 25°C unless otherwise noted. Symbol Parameter Max. Unit PD Total Device Dissipation: Alumina Substrate, TA = 25°C (1) 300 mW Derate Above TA = 25°C 2.4 mW/°C RθJA Thermal Resistance, Junction to Ambient 417 °C/W Symbol Parameter Conditions Min. Max. Unit V(BR)CEO Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0 -45 V V(BR)CES Collector-Emitter Breakdown Voltage IC = -10 μA, IE = 0 -50 V ICBO Collector Cut-Off Current VCB = -20 V, IE = 0 -100 nA VCB = -20 V, IE = 0, TA = 150°C -5 μA IEBO Emitter Cut-Off Current VEB = -5.0 V, IC = 0 -10 μA hFE DC Current Gain IC = -100 mA, VCE = -1.0 V 100 600 IC = -300 mA, VCE = -1.0 V 70 IC = -500 mA, VCE = -1.0 V 40 VCE(sat) Collector-Emitter Saturation Voltage IC = -500 mA, IB = -50 mA -0.62 V VBE(on) Base-Emitter On Voltage IC = -500 mA, VCE = -1.0 V -1.2 V |
Similar Part No. - BCX17 |
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Similar Description - BCX17 |
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