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Si1147-M01-GMR Datasheet(PDF) 6 Page - Silicon Laboratories |
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Si1147-M01-GMR Datasheet(HTML) 6 Page - Silicon Laboratories |
6 / 70 page Si1145/46/47-M01 6 Rev. 1.0 Table 2. Performance Characteristics1 Parameter Symbol Test Condition Min Typ Max Unit IDD OFF Mode Ioff VDD < VDD_OFF (leakage from SCL, SDA, and INT not included) — 240 1000 nA IDD Standby Mode Isb No ALS / PS Conversions No I2C Activity VDD = 1.8 V — 150 500 nA IDD Standby Mode Isb No ALS / PS Conversions No I2C Activity VDD = 3.3 V — 1.4 — μA IDD Actively Measuring Iactive Without LED influence, VDD = 3.3 V — 4.3 5.5 mA Peak IDD while LED1, LED2, or LED3 is Actively Driven VDD = 3.3 V — 8 — mA LED Driver Saturation Voltage2,3 Vdd = 1.71 to 3.6 V PS_LEDn = 0001 PS_LEDn = 0010 PS_LEDn = 0011 PS_LEDn = 0100 PS_LEDn = 0101 PS_LEDn = 0110 PS_LEDn = 0111 PS_LEDn = 1000 PS_LEDn = 1010 PS_LEDn = 1010 PS_LEDn = 1011 PS_LEDn = 1100 PS_LEDn = 1101 PS_LEDn = 1110 PS_LEDn = 1111 — — — — — — — — — — — — — — — 50 60 70 80 115 150 185 220 255 290 315 340 360 385 410 70 105 105 105 450 450 450 450 450 450 600 600 600 600 600 mV LED1, LED2, LED3 Pulse Width tPS — 25.6 30 μs LED1, LED2, LED3, INT, SCL, SDA Leakage Current VDD = 3.3 V –1 — 1 μA Notes: 1. Unless specifically stated in "Conditions", electrical data assumes ambient light levels < 1 klx. 2. Proximity-detection performance may be degraded, especially when there is high optical crosstalk, if the LED supply and voltage drop allow the driver to saturate and current regulation is lost. 3. Guaranteed by design and characterization. 4. Represents the time during which the device is drawing a current equal to Iactive for power estimation purposes. Assumes default settings. |
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