INA826

SBOS562E – AUGUST 2011 – REVISED APRIL 2013

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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

PRODUCT

PACKAGE-LEAD

PACKAGE DESIGNATOR

MSOP-8

DGK

INA826

SO-8

D

DFN-8

DRG

(1)

For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the

device product folder at www.ti.com.

ABSOLUTE MAXIMUM RATINGS

(1)

INA826

UNIT

Supply voltage

±20

V

Input voltage range

V

REF input

±20

V

Continuous

–50 to +150

°C

–65 to +150

°C

+175

°C

Human body model (HBM)

2500

V

ESD rating

Charged device model (CDM)

1500

V

Machine model (MM)

150

V

(1)

Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not implied.

(2)

2

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