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INA826AIDR Datasheet(PDF) 2 Page - Texas Instruments |
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INA826AIDR Datasheet(HTML) 2 Page - Texas Instruments |
2 / 43 page INA826 SBOS562E – AUGUST 2011 – REVISED APRIL 2013 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. PACKAGE/ORDERING INFORMATION(1) PRODUCT PACKAGE-LEAD PACKAGE DESIGNATOR MSOP-8 DGK INA826 SO-8 D DFN-8 DRG (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the device product folder at www.ti.com. ABSOLUTE MAXIMUM RATINGS (1) INA826 UNIT Supply voltage ±20 V Input voltage range (–VS) – 40 to (+VS) + 40 V REF input ±20 V Output short-circuit(2) Continuous Operating temperature range, TA –50 to +150 °C Storage temperature range, TA –65 to +150 °C Junction temperature, TJ +175 °C Human body model (HBM) 2500 V ESD rating Charged device model (CDM) 1500 V Machine model (MM) 150 V (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. (2) Short-circuit to VS/2. 2 Submit Documentation Feedback Copyright © 2011–2013, Texas Instruments Incorporated Product Folder Links: INA826 |
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