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REF5045AQDRQ1 Datasheet(PDF) 4 Page - Texas Instruments |
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REF5045AQDRQ1 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 25 page 1 2 3 4 8 7 6 5 DNC NC TRIM/NR DNC VIN TEMP GND VOUT REF5020A-Q1, REF5025A-Q1, REF5030A-Q1 REF5040A-Q1, REF5045A-Q1, REF5050A-Q1 SBOS456H – SEPTEMBER 2008 – REVISED FEBRUARY 2015 www.ti.com 6 Pin Configuration and Functions D Package 8-Pin SOIC Top View DNC = Do not connect NC = No internal connection Pin Functions PIN I/O DESCRIPTION NAME NO. 1 DNC — Do not connect. Do not use. 8 GND 4 — Ground NC 7 — No internal connection. Do not use. TEMP 3 O Temperature-dependent voltage output TRIM/NR 5 I Trim and noise reduction for ±15-mV output adjustment VIN 2 I Input supply voltage VOUT 6 O Reference voltage output 7 Specifications 7.1 Absolute Maximum Ratings (1) MIN MAX UNIT Input voltage 18 V Output short-circuit 30 mA Operating temperature –40 125 °C Junction temperature (TJ max) 150 °C Storage temperature (Tstg) –65 150 °C (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. 7.2 ESD Ratings VALUE UNIT REF5020A-Q1, REF5040A-Q1, AND REF5050A-Q1 Human-body model (HBM), per AEC Q100-002(1) ±500 V(ESD) Electrostatic discharge Charged-device model (CDM), per AEC Q100-011 ±1000 V Machine Model (MM) 200 REF5030A-Q1 AND REF5045A-Q1 Human-body model (HBM), per AEC Q100-002(1) ±1000 V(ESD) Electrostatic discharge Charged-device model (CDM), per AEC Q100-011 ±1000 V Machine Model (MM) 200 (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 4 Submit Documentation Feedback Copyright © 2008–2015, Texas Instruments Incorporated Product Folder Links: REF5020A-Q1 REF5025A-Q1 REF5030A-Q1 REF5040A-Q1 REF5045A-Q1 REF5050A-Q1 |
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