FCP125N60E datasheet(3/9 Pages) FAIRCHILD

Part #	FCP125N60E

Description	Telecom / Sever Power Supplies

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FCP125N60E Rev. 1.0

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

23456

7

1

10

100

-55

oC

150

oC

*Notes:

1. VDS = 20V

2. 250μs Pulse Test

25

oC

VGS, Gate-Source Voltage[V]

0.3

1

10

1

10

100

*Notes:

1. 250μs Pulse Test

2. TC = 25

oC

VDS, Drain-Source Voltage[V]

VGS = 10.0V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

0

20406080

100

0.0

0.1

0.2

0.3

*Note: TC = 25

oC

VGS = 20V

VGS = 10V

ID, Drain Current [A]

0.00.3

0.60.9

1.21.5

0.001

0.01

0.1

1

10

100

-55

oC

*Notes:

1. V

GS = 0V

2. 250μs Pulse Test

150

oC

V

SD, Body Diode Forward Voltage [V]

25

oC

10

-1

110

10

2

10

3

0.1

1

10

100

1000

10000

100000

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

*Note:

1. VGS = 0V

2. f = 1MHz

Crss

VDS, Drain-Source Voltage [V]

0

163248

64

80

0

2

4

6

8

10

VDS = 480V

VDS = 300V

VDS = 120V

*Note: ID = 14.5A

Qg, Total Gate Charge [nC]

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