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TMD27727 Datasheet(PDF) 8 Page - ams AG |
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TMD27727 Datasheet(HTML) 8 Page - ams AG |
8 / 59 page Page 8 ams Datasheet, Confidential Document Feedback [v1-20] 2014-Jul-21 TMD2772/ TMD2772WA − Electrical Characteristics Figure 10: ALS Characteristics, VDD = 3V, TA = 25°C, AGAIN = 16x, AEN = 1 (unless otherwise noted) Note(s) and/or Footnote(s): 1. Optical measurements are made using small-angle incident radiation from light-emitting diode optical sources. Red 625 nm and infrared 850 nm LEDs are used for final product testing for compatibility with high-volume production. 2. The 625 nm irradiance Ee is supplied by an AlInGaP light-emitting diode with the following typical characteristics: peak wavelength λp = 625 nm and spectral halfwidth Δλ½ = 20 nm. 3. The 850 nm irradiance Ee is supplied by a GaAs light-emitting diode with the following typical characteristics: peak wavelength λp = 850 nm and spectral halfwidth Δλ½ = 42 nm. 4. Unless otherwise specified, measurements are taken with ATIME= 0xF6 (27 ms). Parameter Test Conditions (1), (2), (3), (4) Channel Min Typ Max Unit ADC count value TMD2772 (25°) λp = 625 nm, Ee = 46.8 μW/cm 2 CH0 4000 5000 6000 counts CH1 950 λp = 850 nm, Ee = 61.7 μW/cm 2 CH0 4000 5000 6000 counts CH1 2900 ADC count value TMD2772WA (50°) λp = 625 nm, Ee = 129.5 μW/cm 2 CH0 4000 5000 6000 counts CH1 950 λp = 850 nm, Ee = 181.2 μW/cm 2 CH0 4000 5000 6000 counts CH1 2900 ADC count value ratio: CH1/CH0 λp = 625 nm 0.152 0.19 0.228 λp = 850 nm 0.43 0.58 0.73 Re Irradiance responsivity TMD2772 (25°) λp = 625 nm CH0 107.2 counts /(μW/ cm2) CH1 20.4 λp = 850 nm CH0 81.5 CH1 47.3 Re Irradiance responsivity TMD2772WA (50°) λp = 625 nm CH0 38.6 counts /(μW/ cm2) CH1 7.3 λp = 850 nm CH0 27.6 CH1 16.0 Gain scaling, relative to 1× gain setting AGAIN = 1× and AGL = 1 0.16 x AGAIN = 8× and AGL = 0 7.2 8.0 8.8 AGAIN = 16× and AGL = 0 14.4 16.0 17.6 AGAIN = 120× and AGL = 0 108 120 132 |
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