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TAS5768MRMTR Datasheet(PDF) 7 Page - Texas Instruments

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Part # TAS5768MRMTR
Description  Smart Amp
Download  84 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TAS5768MRMTR Datasheet(HTML) 7 Page - Texas Instruments

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TAS5766M, TAS5768M
www.ti.com
SLAS965C – SEPTEMBER 2013 – REVISED JANUARY 2015
7.4 Thermal Information
TAS576xM
RMT (48 PINS)
DCA (48 PINS)
THERMAL METRIC(1)
UNIT
2 LAYER
4 LAYER PCB(2)
PCB(3)
RθJA
Junction-to-ambient thermal resistance
30
30
RθJC(top)
Junction-to-case (top) thermal resistance
15
14
RθJB
Junction-to-board thermal resistance
6
13
°C/W
ψJT
Junction-to-top characterization parameter
0.2
0.6
ψJB
Junction-to-board characterization parameter
6
13
RθJC(bot)
Junction-to-case (bottom) thermal resistance
1.9
0.7
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2)
For the PCB layout see the TAS576xMRMTEVM User Guide. A 4 layer 60x60mm 1oc PCB was used
(3)
For the PCB layout see the TAS576xMDCAEVM User Guide. A 2 layer 60x60mm 1oc PCB was used
7.5 DC Electrical Characteristics
All specifications at TA = 25°C, AVDD = CPVDD = DVDD = 3.3 V, fS = 48 kHz, system clock = 512 fS and 24-bit data, VCC =
12 V to 24 V, RL = 4 Ω (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Class-D output offset voltage (measured
PVCC = 12 V, gain set to 14 dB
1
10
mV
differentially)
| VOS |
PVCC = 24 V, gain set to 20 dB
1.5
15
mV
Input is Bipolar Zero data
Drain-source on-state resistance, measured
RDS(on)
VCC = 24 V, Iout = 500 mA, TJ = 25°C
120
m
pin to pin
Gain pin voltage < 3 V
13
14
15
dB
G
Analog Gain from INxx to OUTxx
Gain pin voltage > 3.3 V
19
20
21
dB
ton
Turn-on time
XSMT = 2 V
1.5
ms
tOFF
Turn-off time
XSMT = 0.8 V
0.8
ms
GVDD
Gate Drive Supply Voltage
IGVDD
≤ 200 µA
6.9
V
Copyright © 2013–2015, Texas Instruments Incorporated
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Product Folder Links: TAS5766M TAS5768M


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