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TAS5768MRMTR Datasheet(PDF) 7 Page - Texas Instruments |
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TAS5768MRMTR Datasheet(HTML) 7 Page - Texas Instruments |
7 / 84 page TAS5766M, TAS5768M www.ti.com SLAS965C – SEPTEMBER 2013 – REVISED JANUARY 2015 7.4 Thermal Information TAS576xM RMT (48 PINS) DCA (48 PINS) THERMAL METRIC(1) UNIT 2 LAYER 4 LAYER PCB(2) PCB(3) RθJA Junction-to-ambient thermal resistance 30 30 RθJC(top) Junction-to-case (top) thermal resistance 15 14 RθJB Junction-to-board thermal resistance 6 13 °C/W ψJT Junction-to-top characterization parameter 0.2 0.6 ψJB Junction-to-board characterization parameter 6 13 RθJC(bot) Junction-to-case (bottom) thermal resistance 1.9 0.7 (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. (2) For the PCB layout see the TAS576xMRMTEVM User Guide. A 4 layer 60x60mm 1oc PCB was used (3) For the PCB layout see the TAS576xMDCAEVM User Guide. A 2 layer 60x60mm 1oc PCB was used 7.5 DC Electrical Characteristics All specifications at TA = 25°C, AVDD = CPVDD = DVDD = 3.3 V, fS = 48 kHz, system clock = 512 fS and 24-bit data, VCC = 12 V to 24 V, RL = 4 Ω (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Class-D output offset voltage (measured PVCC = 12 V, gain set to 14 dB 1 10 mV differentially) | VOS | PVCC = 24 V, gain set to 20 dB 1.5 15 mV Input is Bipolar Zero data Drain-source on-state resistance, measured RDS(on) VCC = 24 V, Iout = 500 mA, TJ = 25°C 120 m Ω pin to pin Gain pin voltage < 3 V 13 14 15 dB G Analog Gain from INxx to OUTxx Gain pin voltage > 3.3 V 19 20 21 dB ton Turn-on time XSMT = 2 V 1.5 ms tOFF Turn-off time XSMT = 0.8 V 0.8 ms GVDD Gate Drive Supply Voltage IGVDD ≤ 200 µA 6.9 V Copyright © 2013–2015, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Links: TAS5766M TAS5768M |
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