DESD3V3S1BL

Document number: DS35995 Rev. 4 - 2

2 of 5

www.diodes.com

March 2015

© Diodes Incorporated

DESD3V3S1BL

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Power Dissipation

35

W

8/20

μs, Per Figure 3

Peak Pulse Current

5

A

8/20

μs, Per Figure 3

ESD Protection

– Contact Discharge

±25

kV

IEC 61000-4-2 Standard

ESD Protection

– Air Discharge

±30

kV

IEC 61000-4-2 Standard

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 5)

250

mW

Thermal Resistance, Junction to Ambient (Note 5)

500

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Standoff Voltage

—

—

3.3

V

—

Channel Leakage Current (Note 6)

—

10

100

nA

Clamping Voltage, Positive Transients

—

—



4.5

5.8

5.4

7.0

V

Breakdown Voltage

3.8

—

6.5

V

Differential Resistance

—

0.3

—

Ω

Channel Input Capacitance

—

10

13

pF

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website

at

http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.