AL8812

Document number: DS37099 Rev. 1 - 2

3 of 11

www.diodes.com

March 2014

© Diodes Incorporated

AL8812

Symbol

Parameter

Value

Unit

Power Supply Voltage

20

V

Comparator Input Voltage Range

-0.3 to +36

V

SW/C

Switch Collector Voltage

36

V

SW/E

36

V

Switch Collector to Emitter Voltage

36

V

DRIVE

Driver Collector Voltage

36

V

Driver Collector Current (Note 4)

100

mA

Switch Current

1.6

A

Maximum MOSFET Drain-Source voltage

60

V

Maximum MOSFET Gate-Source voltage

+/-20

V

Maximum Continuous Source (Body Diode) Current

3.7

A

(U-DFN6040-12 (derate 10mW/

°C above +25°C)

1000

mW

Junction-to-Ambient Thermal Resistance

47.31

°C/W

Junction-to-Case Thermal Resistance

6.42

°C/W

Maximum Junction Temperature

+150

°C

Operating Junction Temperature Range

0 to +105

°C

Storage Temperature Range

-65 to +150

°C

ESD HBM

Human Body Model ESD Protection

250

V

ESD MM

Machine Model ESD Protection

100

V

Note:

4. Maximum package power dissipation limits must be observed.

Symbol

Characteristics

Min

Typ

Max

Unit

OSCILLATOR

24

33

42

kHz

24

30

42

μA

140

200

260

μA

5.2

6.5

7.5

—

300

400

450

mV

OUTPUT SWITCH (Note 5)

Saturation Voltage, Darlington Connection

—

1.0

1.3

V

Saturation Voltage, Darlington Connection

—

0.45

0.7

V

50

75

—

—

-

0.01

100

μA

OUTPUT MOSFET

MOSFET Gate Threshold voltage

1

—

2.2

V

MOSFET Diodes forward voltage

—

.85

.95

V

Drain-source on-resistance (VGS = 10V, ID = 2.5A)

Drain-source on-resistance (VGS = 4.5V, ID = 2A)

—

—

120

180

mΩ

mΩ

COMPARATOR

Threshold Voltage

—

—

—

V

—

1.225

1.25

1.275

—

—

1.21

—

1.29

—

—

1.4

6.0

mV

TOTAL DEVICE

= Gnd, remaining pins open)

—

—

3.5

mA

Note:

5. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient temperature as possible.