BB669 datasheet(2/3 Pages) INFINEON

Part #	BB669

Description	Silicon Tuning Diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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BB669

Jul-05-2001

2

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC characteristics

Reverse current

VR = 30 V

IR

-

10

nA

Reverse current

VR = 30 V, TA = 85 °C

IR

-

200

AC characteristics

pF

Diode capacitance

VR = 1 V, f = 1 MHz

VR = 2 V, f = 1 MHz

VR = 25 V, f = 1 MHz

VR = 28 V, f = 1 MHz

56.5

43.4

2.8

2.7

61.5

47.2

3

2.9

51

39.6

2.6

2.5

CT

-

Capacitance ratio

VR = 2 V, VR = 25 V, f = 1 MHz

CT2/CT25

17

15.5

14.5

CT1/CT28

Capacitance ratio

VR = 1 V, VR = 28 V, f = 1 MHz

20.9

23.3

18

%

CT/CT

-

Capacitance ratio 1)

VR = 1 V, VR = 28 V, f = 1 MHz

-

2

Series resistance

VR = 8 V, f = 470 MHz

0.85

-

rs

nH

Series inductance

Ls

-

1.8

-

1) In-line matching. For details please refer to Application Note 047

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