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EM342 Datasheet(PDF) 9 Page - Silicon Laboratories |
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EM342 Datasheet(HTML) 9 Page - Silicon Laboratories |
9 / 143 page EM342 Rev 1.0 9 Reset Current Quiescent current, nRESET asserted Typ at 25 °C/3.0 V Max at 85 °C/3.6 V — 1.2 2.0 mA Processor and Peripheral Currents ARM® CortexTM-M3, RAM, and flash memory 25 °C, 1.8 V memory and 1.25 V core ARM® CortexTM-M3 running at 12 MHz from crystal oscillator Radio and all peripherals off — 6.5 — mA ARM® CortexTM-M3, RAM, and flash memory 25 °C, 1.8 V memory and 1.25 V core ARM® CortexTM-M3 running at 24 MHz from crystal oscillator Radio and all peripherals off — 7.5 — mA ARM® CortexTM-M3, RAM, and flash memory sleep current 25 °C, 1.8 V memory and 1.25 V core ARM® CortexTM-M3 sleeping, CPU clock set to 12 MHz from the crystal oscillator Radio and all peripherals off — 3.0 — mA ARM® CortexTM-M3, RAM, and flash memory sleep current 25 °C, 1.8 V memory and 1.25 V core ARM® CortexTM-M3 sleeping, CPU clock set to 6 MHz from the high fre- quency RC oscillator Radio and all peripherals off — 2.0 — mA Serial controller current For each controller at maximum data rate — 0.2 — mA RX Current Radio receiver, MAC, and base- band ARM® CortexTM-M3 sleeping, CPU clock set to 12 MHz — 22.0 — mA Total RX current ( = IRadio receiver, MAC and baseband, CPU + IRAM, and Flash memory ) 25 °C, VDD_PADS=3.0 V ARM® CortexTM-M3 running at 12 MHz — 25.5 — mA 25 °C, VDD_PADS=3.0 V ARM® CortexTM-M3 running at 24 MHz — 26.5 — mA Boost mode total RX current ( = IRadio receiver, MAC and base- band, CPU+ IRAM, and flash memory ) 25 °C, VDD_PADS=3.0 V ARM® CortexTM-M3 running at 12 MHz — 27.5 — mA 25 °C, VDD_PADS=3.0 V ARM® CortexTM-M3 running at 24 MHz — 28.5 — mA Table 2.4. DC Characteristics (Continued) Measured on Silicon Labs’ EM357 reference design with TA = 25 °C and VDD = 3 V, unless otherwise noted. Parameter Test Condition Min Typ Max Unit |
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