BC849BT datasheet(3/9 Pages) INFINEON

Part #	BC849BT

Description	NPN Silicon AF Transistors

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Manufacturer	INFINEON [Infineon Technologies AG]

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BC846T...BC850T

3

Aug-01-2002

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 µA, VBE = 0

BC846T

IC = 10 µA, VBE = 0

BC847T/850T

IC = 10 µA, VBE = 0

BC848T/849T

V(BR)CES

65

50

30

-

V

Emitter-base breakdown voltage

IE = 1 µA, IC = 0

BC846T

IE = 1 µA, IC = 0

BC847T/BC850T

IE = 1 µA, IC = 0

BC848T/BC849T

V(BR)EBO

6

5

-

Collector cutoff current

VCB = 30 V, IE = 0

ICBO

-

15

nA

Collector cutoff current

VCB = 30 V, IE = 0 , TA = 150 °C

ICBO

-

5

µA

DC current gain 1)

IC = 10 µA, VCE = 5 V

hFE-group A

IC = 10 µA, VCE = 5 V

hFE-group B

IC = 10 µA, VCE = 5 V

hFE-group C

hFE

-

140

250

480

-

DC current gain 1)

IC = 2 mA, VCE = 5 V

hFE-group A

IC = 2 mA, VCE = 5 V

hFE-group B

IC = 2 mA, VCE = 5 V

hFE-group C

hFE

110

200

420

180

290

520

220

450

800

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

-

90

200

250

600

mV

Base-emitter saturation voltage 1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

-

700

900

-

Base-emitter voltage 1)

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

VBE(ON)

580

-

660

-

700

770

1) Pulse test: t

≤=300µs, D = 2%

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